56F8322 Techncial Data, Rev. 10.0
108 Freescale Semiconductor
Preliminary

Figure 10-1 Input Signal Measurement References

Figure 10-2 shows the definitions of the following signal states:

Active state, when a bus or signal is driven, and enters a low impedance state

Tri-stated, when a bus or signal is place d in a high impedance state

Data Valid state, when a signal level has reached VOL or VOH

Data Invalid state, when a signal level is in transition between VOL and VOH

Figure 10-2 Signal States

10.4 Flash Memory Characteristics

Table 10-12 Flash Timing Paramete rs

Characteristic Symbol Min Typ Max Unit
Program time1
1. There is additional overhead which is part of the programming sequence. See the 56F8300 Peripheral User Manual for det ail s.
Program time is per 16-bit word in Flash memory. Two words at a time can be programmed within the Program Flas h module,
as it contains two interleaved memories.
Tprog 20 — — µs
Erase time2
2. Specifies page er ase time. There are 512 byt es per page in the Data and Boot Flash memories. The Program Flash module
uses two interleaved Flash memories, increasing the effective page s ize to 1024 bytes.
Terase 20 — — ms
Mass erase time Tme 100 — — ms
VIH
VIL
Fall Time
Input Signal
Note: The midpoint is VIL + (VIH – VIL)/2.
Midpoint1
Low High
90%
50%
10%
Rise Time
Data Invalid State
Data1
Data2 Valid
Data
Tri-stated
Data3 Valid
Data2 Data3
Data1 Valid
Data Active Data Active