Datasheet 71
Electrical Specifications
Notes:
1. This table applies to the processor sideband and miscellaneous signals specified in Table 7-5.
2. Unless otherwise noted, all specifications in this table apply to all processor frequencies.
3. These signals are measured between VIL and VIH.
Table 7-19. Processor Asynchronous Sideband DC Specifications
Symbol Parameter Min Max Units Notes
CMOS1.0v Signals
VIL_CMOS1.0v Input Low Voltage — 0.3*VTT V 1, 2
VIH_CMOS1.0v Input High Voltage 0.7*VTT — V 1, 2
VHysteresis Hysteresis 0.1*VTT — V 1, 2
IIL_CMOS1.0v Input Leakage Current 50 200 A 1, 2
Open Drain CMOS (ODCMOS) Signals
VIL_ODCMOS
Input Low Voltage
Signals: MEM_HOT_C01/23_N, PROCHOT_N — 0.3*VTT V 1, 2
VIL_ODCMOS
Input Low Voltage
Signals: CAT_ERR_N — 0.4*VTT V 1,2
VIH_ODCMOS Input High Voltage 0.7*VTT — V 1, 2
VOL_ODCMOS Output Low Voltage — 0.2*VTT V 1, 2
VHysteresis
Hysteresis
Signals: MEM_HOT_C01/23_N, PROCHOT_N — 0.1*VTT V 1, 2
VHysteresis
Hysteresis
Signal: CAT_ERR_N 0.05*VTT — V 1, 2
ILeak Input Leakage Current 50 200 A
RON Buffer On Resistance 4 14 W 1, 2
Output Edge Rate
Signal:MEM_HOT_C{01/23}_N, ERROR_N[2:0],
THERMTRIP, PROCHOT_N
0.05 0.60 V/ns 3
Output Edge Rate
Signal: CAT_ERR_N 0.2 1.5 V/ns 3
Table 7-20. Miscellaneous Signals DC Specifications
Symbol Parameter Min Typical Max Units Notes
IVT_ID_N Signal
VO_ABS_MAX Output Absolute Maximum Voltage — 1.10 1.80 V
IOOutput Current — — 0 A1
SKTOCC_N Signal
VO_ABS_MAX Output Absolute Maximum Voltage — 3.30 3.50 V
IOMAX Output Maximum Current — — 1 mA
Notes:
1. IVT_ID_N land is a no connect on the die.