Reference
44 80E00 ElectricalSampling Modules User Manual
Figure16: TDRst ep of undamaged sampling module
EOS (ElectricalOverstress) Prevention
EOS occurs when anelectronic device is subjected to an input voltage higher
than its designed maximumtolerable level. Similar to ESD (Electrical Static
Damage), EOS usually is alsorelated to static charges generated by moving
elements. However,unlike ESD that typically deals with thousands of volts,
EOS can occur at a low voltage level. For Tektronix80E00-series modules, EOS
damage couldoccur at levels as low as 10 V. EOS can havea cumulative effect;
repetitiveEOS causes incremental damageover time and results in sampling
function deterioration.
Standard ESD precautions are not v ery effective for EOS damage prevention.
This is particularly truewhen the Device Under Test (DUT) is isolated from any
referencevoltage levels, including the ground level. To prevent EOS damage of
80E00-seriesmodules, strictly follow these EOS-prevention requirements:
HObserve all ESD prevention procedures.
HBefore letting the probetip touch the device under test, use a ground-
conducting elementto discharge any residual charge at the test point.
HWhile measuringthe DUT, make sure that no nearby personnel or objects are
moving. Moving personnel or objectscan induce spurious charges on the
probe head. Such charges can easily reach levels of several hundred volts.
HFor non-criticalapplications, proper usage of a static-isolation unit, such as
the Tektronix80A02 EOS/ESD Protection Module, can safely discharge the
residual chargesand protect the modules from EOS damages.

Prevention