Cypress CY7C1382FV25 manual Identification Codes, Ball BGA Boundary Scan Order 13, Bit # Ball ID

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												CY7C1380DV25, CY7C1380FV25
Identification Codes												CY7C1382DV25, CY7C1382FV25
												CY7C1382DV25, CY7C1382FV25




Instruction				Code									Description

EXTEST				000				Captures IO ring contents. Places the boundary scan register between TDI and TDO.
								Forces all SRAM outputs to High-Z state.
IDCODE				001				Loads the ID register with the vendor ID code and places the register between TDI and
								TDO. This operation does not affect SRAM operations.
SAMPLE Z				010				Captures IO ring contents. Places the boundary scan register between TDI and TDO.
								Forces all SRAM output drivers to a High-Z state.
RESERVED				011				Do Not Use. This instruction is reserved for future use.

SAMPLE/PRELOAD				100				Captures IO ring contents. Places the boundary scan register between TDI and TDO.
								Does not affect SRAM operation.
RESERVED				101				Do Not Use. This instruction is reserved for future use.

RESERVED				110				Do Not Use. This instruction is reserved for future use.

BYPASS				111				Places the bypass register between TDI and TDO. This operation does not affect SRAM
								operations.
119-Ball BGA Boundary Scan Order [13, 14]
Bit #		Ball ID					Bit #			Ball ID		Bit #		Ball ID		Bit #	Ball ID

1		H4					23			F6		45		G4		67	L1
2		T4					24			E7		46		A4		68	M2

3		T5					25			D7		47		G3		69	N1

4		T6					26			H7		48		C3		70	P1

5		R5					27			G6		49		B2		71	K1

6		L5					28			E6		50		B3		72	L2

7		R6					29			D6		51		A3		73	N2
8		U6					30			C7		52		C2		74	P2

9		R7					31			B7		53		A2		75	R3

10		T7					32			C6		54		B1		76	T1

11		P6					33			A6		55		C1		77	R1

12		N7					34			C5		56		D2		78	T2

13		M6					35			B5		57		E1		79	L3

14		L7					36			G5		58		F2		80	R2

15		K6					37			B6		59		G1		81	T3

16		P7					38			D4		60		H2		82	L4

17		N6					39			B4		61		D1		83	N4

18		L6					40			F4		62		E2		84	P4

19		K7					41			M4		63		G2		85	Internal

20		J5					42			A5		64		H1

21		H6					43			K4		65		J3

22		G7					44			E4		66		2K

Notes:

13.Balls that are NC (No Connect) are preset LOW.

14.Bit #85 is preset HIGH.

Document #: 38-05546 Rev. *E

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide 250 MHz 200 MHz 167 MHz UnitLogic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M x Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K xPin Configurations Pin Tqfp Pinout 3 Chip Enable CY7C1380DV25 512K XCY7C1382DV25 1M x CY7C1380FV25 512K x Pin Configurations Ball BGA PinoutCY7C1380DV25 512K x Pin Configurations Ball Fbga Pinout 3 Chip EnableByte write select inputs, active LOW. Qualified with Power supply inputs to the core of the devicePin Definitions Name DescriptionFunctional Overview Power supply for the IO circuitrySingle Read Accesses Single Write Accesses Initiated by AdspBurst Sequences Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND ZZ Mode Electrical CharacteristicsCE1 CE2 CE3 Adsp Adsc ADV Write CLK Operation Add. UsedTruth Table for Read/Write 6 Function CY7C1380DV25/CY7C1380FV25Function CY7C1382DV25/CY7C1382FV25 TAP Controller State Diagram TAP Controller Block DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterHold Times TAP AC Switching CharacteristicsTAP Timing Parameter Description Min Max Unit ClockIdentification Register Definitions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions 5V TAP AC Output Load EquivalentBit # Ball ID Identification CodesBall BGA Boundary Scan Order 13 Instruction Code DescriptionA11 Electrical Characteristics Maximum RatingsOperating Range Package CapacitanceThermal Resistance AC Test Loads and WaveformsOutput Times Switching CharacteristicsSetup Times 250 MHz 200 MHz 167 MHz Parameter Description MinRead Cycle Timing Switching WaveformsWrite Cycle Timing 25 CLZ Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Orig. Description of Change Date Document HistoryDocument Number

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.