Cypress CY7C1382DV25 Burst Sequences, Interleaved Burst Address Table Mode = Floating or VDD

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CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25

ADSP triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the write operation is controlled by BWE and BWX signals.

The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 provides byte write capability that is described in the write cycle descriptions table. Asserting the byte write enable input (BWE) with the selected byte write (BWX) input, will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self timed write mechanism has been provided to simplify the write operations.

The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 is a common IO device, the output enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE.

Single Write Accesses Initiated by ADSC

ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BWX) are asserted active to conduct a write to the desired byte(s). ADSC triggered write accesses require a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQs is written into the corresponding address location in the memory core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self timed write mechanism has been provided to simplify the write operations.

The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 is a common IO device, the output enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs are automatically tri-stated whenever a write cycle is detected, regardless of the state of OE.

Burst Sequences

The CY7C1380DV25/CY7C1382DV25/CY7C1380FV25/ CY7C1382FV25 provides a two-bit wraparound counter, fed by A1: A0, that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input.

Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both read and write burst operations are supported.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation sleep mode. Two clock cycles are required to enter into or exit from this sleep mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the sleep mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the sleep mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW.

Interleaved Burst Address Table (MODE = Floating or VDD)

First

Second

Third

Fourth

Address

Address

Address

Address

A1: A0

A1: A0

A1: A0

A1: A0

00

01

10

11

 

 

 

 

01

00

11

10

 

 

 

 

10

11

00

01

 

 

 

 

11

10

01

00

 

 

 

 

Linear Burst Address Table (MODE = GND)

First

Second

Third

Fourth

Address

Address

Address

Address

A1: A0

A1: A0

A1: A0

A1: A0

00

01

10

11

 

 

 

 

01

10

11

00

 

 

 

 

10

11

00

01

 

 

 

 

11

00

01

10

 

 

 

 

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min.

Max.

 

Unit

IDDZZ

Sleep mode standby current

ZZ > VDD – 0.2V

 

80

 

mA

tZZS

Device operation to ZZ

ZZ > VDD – 0.2V

 

2tCYC

 

ns

tZZREC

ZZ recovery time

ZZ < 0.2V

2tCYC

 

 

ns

tZZI

ZZ Active to sleep current

This parameter is sampled

 

2tCYC

 

ns

tRZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

 

 

ns

Document #: 38-05546 Rev. *E

 

 

 

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Contents Features Selection Guide250 MHz 200 MHz 167 MHz Unit Cypress Semiconductor CorporationLogic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K x Logic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M xCY7C1382DV25 1M x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1380DV25 512K X Pin Configurations Ball BGA Pinout CY7C1380FV25 512K xPin Configurations Ball Fbga Pinout 3 Chip Enable CY7C1380DV25 512K xPower supply inputs to the core of the device Pin DefinitionsName Description Byte write select inputs, active LOW. Qualified withPower supply for the IO circuitry Single Read AccessesSingle Write Accesses Initiated by Adsp Functional OverviewInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Burst SequencesOperation Add. Used CE1 CE2 CE3 Adsp Adsc ADV Write CLKFunction CY7C1382DV25/CY7C1382FV25 Truth Table for Read/Write 6Function CY7C1380DV25/CY7C1380FV25 Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram Bypass Register TAP Instruction SetTAP AC Switching Characteristics TAP TimingParameter Description Min Max Unit Clock Hold TimesTAP DC Electrical Characteristics And Operating Conditions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Identification Register DefinitionsIdentification Codes Ball BGA Boundary Scan Order 13Instruction Code Description Bit # Ball IDA11 Operating Range Electrical CharacteristicsMaximum Ratings Capacitance Thermal ResistanceAC Test Loads and Waveforms PackageSwitching Characteristics Setup Times250 MHz 200 MHz 167 MHz Parameter Description Min Output TimesSwitching Waveforms Read Cycle TimingWrite Cycle Timing 25 Read/Write Cycle Timing 25, 27 CLZZZ Mode Timing 29 DON’T CareOrdering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document Number Issue Orig. Description of Change DateDocument History

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.
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