Cypress CY7C1382DV25, CY7C1382FV25 manual Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K x

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CY7C1380DV25, CY7C1380FV25

 

 

 

 

 

 

CY7C1382DV25, CY7C1382FV25

Logic Block Diagram – CY7C1380DV25/CY7C1380FV25 [3] (512K x 36)

 

 

 

A0, A1, A

 

ADDRESS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

REGISTER

 

2

A[1:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

 

 

 

 

 

 

 

 

ADV

 

 

 

 

Q1

 

 

 

 

 

CLK

 

 

 

BURST

 

 

 

 

 

 

 

 

COUNTER

 

 

 

 

 

 

 

 

CLR

AND

Q0

 

 

 

 

 

ADSC

 

 

 

LOGIC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADSP

 

 

 

 

 

 

 

 

 

 

 

 

DQ D , DQP D

 

 

DQ D ,DQP D

 

 

 

 

 

BW D

 

BYTE

 

 

BYTE

 

 

 

 

 

 

 

WRITE REGISTER

 

 

WRITE DRIVER

 

 

 

 

 

 

 

DQ C , DQP C

 

 

DQ C , DQP C

 

 

 

 

 

BW C

 

BYTE

 

 

BYTE

 

 

 

OUTPUT

 

 

 

WRITE REGISTER

 

 

WRITE DRIVER

MEMORY

SENSE

OUTPUT

D Q s

 

 

 

 

BUFFERS

 

 

 

 

 

 

ARRAY

REGISTERS

 

 

 

 

 

DQ B , DQP B

AMPS

E

DQP A

 

 

DQ B , DQP B

 

 

 

 

 

 

 

 

 

 

 

DQP B

BW B

 

BYTE

 

 

BYTE

 

 

 

 

 

 

 

 

 

 

 

DQP C

 

 

 

WRITE DRIVER

 

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQP D

 

 

 

 

 

 

 

 

 

 

 

 

DQ A , DQP A

 

 

DQ A , DQP A

 

 

 

 

 

 

 

 

 

BYTE

 

 

 

 

 

BW A

 

BYTE

 

 

 

 

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

 

BWE

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GW

 

 

 

 

 

 

 

 

 

INPUT

 

ENABLE

PIPELINED

 

 

 

 

 

REGISTERS

CE

1

REGISTER

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

CE

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE 3

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Logic Block Diagram – CY7C1382DV25/CY7C1382FV25 [3] (1M x 18)

 

 

 

A0, A1, A

ADDRESS

 

 

 

 

 

 

REGISTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

ADV

 

BURST

Q1

 

 

 

 

CLK

 

COUNTER AND

 

 

 

 

 

 

LOGIC

 

 

 

 

 

ADSC

 

 

 

 

 

 

 

 

DQ B, DQP B

 

DQ B, DQP B

 

 

 

 

 

 

WRITE DRIVER

 

 

 

 

BW B

WRITE REGISTER

 

 

 

OUTPUT

DQs

 

 

 

OUTPUT

 

 

MEMORY

SENSE

 

 

 

BUFFERS

DQP A

 

 

 

 

 

 

 

 

ARRAY

 

 

 

DQP B

 

DQ A,DQP A

 

DQ A,DQP A

 

 

 

 

 

 

 

 

 

BW A

 

WRITE DRIVER

 

 

 

 

WRITE REGISTER

 

 

 

 

 

 

 

 

 

 

 

BWE

 

 

 

 

 

 

INPUT

GW

 

 

 

 

 

 

ENABLE

 

 

 

 

 

 

CE 1

PIPELINED

 

 

 

 

REGISTER

 

 

 

 

CE2

 

 

ENABLE

 

 

 

 

CE3

 

 

 

 

 

 

 

 

 

 

 

 

 

OE

 

 

 

 

 

 

 

ZZ

SLEEP

 

 

 

 

 

 

CONTROL

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

 

 

 

 

 

 

 

3. CY7C1380F and CY7C1382F have only 1 Chip Enable (CE1).

 

 

 

 

Document #: 38-05546 Rev. *E

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Contents 250 MHz 200 MHz 167 MHz Unit FeaturesSelection Guide Cypress Semiconductor CorporationLogic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K x Logic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M xCY7C1382DV25 1M x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1380DV25 512K X Pin Configurations Ball BGA Pinout CY7C1380FV25 512K xPin Configurations Ball Fbga Pinout 3 Chip Enable CY7C1380DV25 512K xName Description Power supply inputs to the core of the devicePin Definitions Byte write select inputs, active LOW. Qualified withSingle Write Accesses Initiated by Adsp Power supply for the IO circuitrySingle Read Accesses Functional OverviewZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Burst SequencesOperation Add. Used CE1 CE2 CE3 Adsp Adsc ADV Write CLKFunction CY7C1382DV25/CY7C1382FV25 Truth Table for Read/Write 6Function CY7C1380DV25/CY7C1380FV25 Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram Bypass Register TAP Instruction SetParameter Description Min Max Unit Clock TAP AC Switching CharacteristicsTAP Timing Hold Times5V TAP AC Output Load Equivalent TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsInstruction Code Description Identification CodesBall BGA Boundary Scan Order 13 Bit # Ball IDA11 Operating Range Electrical CharacteristicsMaximum Ratings AC Test Loads and Waveforms CapacitanceThermal Resistance Package250 MHz 200 MHz 167 MHz Parameter Description Min Switching CharacteristicsSetup Times Output TimesSwitching Waveforms Read Cycle TimingWrite Cycle Timing 25 Read/Write Cycle Timing 25, 27 CLZZZ Mode Timing 29 DON’T CareOrdering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Package Diagrams Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document Number Issue Orig. Description of Change DateDocument History

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.
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