Cypress CY7C1382FV25 Switching Characteristics, MHz 200 MHz 167 MHz Parameter Description Min

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CY7C1380DV25, CY7C1380FV25

CY7C1382DV25, CY7C1382FV25

Switching Characteristics

Over the Operating Range [19, 20]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

250 MHz

200 MHz

167 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Description

Min.

Max

Min.

Max.

Min.

Max

Unit

 

 

 

 

 

 

 

 

 

 

 

t

POWER

 

V (Typical) to the First Access [21]

1

 

1

 

1

 

ms

 

 

DD

 

 

 

 

 

 

 

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

4.0

 

5

 

6

 

ns

tCH

 

Clock HIGH

1.7

 

2.0

 

2.2

 

ns

tCL

 

Clock LOW

1.7

 

2.0

 

2.2

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

 

Data Output Valid After CLK Rise

 

2.6

 

3.0

 

3.4

ns

tDOH

 

Data Output Hold After CLK Rise

1.0

 

1.3

 

1.3

 

ns

tCLZ

 

Clock to Low-Z [22, 23, 24]

1.0

 

1.3

 

1.3

 

ns

tCHZ

 

Clock to High-Z [22, 23, 24]

 

2.6

 

3.0

 

3.4

ns

tOEV

 

 

 

LOW to Output Valid

 

2.6

 

3.0

 

3.4

ns

OE

 

tOELZ

 

 

 

LOW to Output Low-Z [22, 23, 24]

0

 

0

 

0

 

ns

OE

 

tOEHZ

 

 

 

HIGH to Output High-Z [22, 23, 24]

 

2.6

 

3.0

 

3.4

ns

OE

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Setup Before CLK Rise

1.2

 

1.4

 

1.5

 

ns

tADS

 

 

 

 

 

 

 

 

 

 

 

 

 

Setup Before CLK Rise

1.2

 

1.4

 

1.5

 

ns

ADSC,

ADSP

 

tADVS

 

 

 

 

 

Setup Before CLK Rise

1.2

 

1.4

 

1.5

 

ns

ADV

 

tWES

 

 

 

 

 

 

 

 

 

 

 

 

 

X Setup Before CLK Rise

1.2

 

1.4

 

1.5

 

ns

GW,

BWE,

BW

 

tDS

 

Data Input Setup Before CLK Rise

1.2

 

1.4

 

1.5

 

ns

tCES

 

Chip Enable Setup Before CLK Rise

1.2

 

1.4

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold After CLK Rise

0.3

 

0.4

 

0.5

 

ns

tADH

 

 

 

 

 

 

 

 

 

 

 

Hold After CLK Rise

0.3

 

0.4

 

0.5

 

ns

ADSP,

ADSC

 

tADVH

 

 

 

 

Hold After CLK Rise

0.3

 

0.4

 

0.5

 

ns

ADV

 

tWEH

 

 

 

 

 

 

 

 

 

 

 

 

 

X Hold After CLK Rise

0.3

 

0.4

 

0.5

 

ns

GW,

BWE,

BW

 

tDH

 

Data Input Hold After CLK Rise

0.3

 

0.4

 

0.5

 

ns

tCEH

 

Chip Enable Hold After CLK Rise

0.3

 

0.4

 

0.5

 

ns

Notes:

19.Timing reference level is 1.5V when VDDQ = 1.25V when VDDQ = 2.5V.

20.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

21.This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated.

22.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

23.At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

24.This parameter is sampled and not 100% tested.

Document #: 38-05546 Rev. *E

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Contents Cypress Semiconductor Corporation FeaturesSelection Guide 250 MHz 200 MHz 167 MHz UnitLogic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M x Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K xCY7C1380DV25 512K X Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1382DV25 1M x CY7C1380FV25 512K x Pin Configurations Ball BGA PinoutCY7C1380DV25 512K x Pin Configurations Ball Fbga Pinout 3 Chip EnableByte write select inputs, active LOW. Qualified with Power supply inputs to the core of the devicePin Definitions Name DescriptionFunctional Overview Power supply for the IO circuitrySingle Read Accesses Single Write Accesses Initiated by AdspBurst Sequences Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND ZZ Mode Electrical CharacteristicsCE1 CE2 CE3 Adsp Adsc ADV Write CLK Operation Add. UsedFunction CY7C1380DV25/CY7C1380FV25 Truth Table for Read/Write 6Function CY7C1382DV25/CY7C1382FV25 TAP Controller Block Diagram TAP Controller State DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterHold Times TAP AC Switching CharacteristicsTAP Timing Parameter Description Min Max Unit ClockIdentification Register Definitions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions 5V TAP AC Output Load EquivalentBit # Ball ID Identification CodesBall BGA Boundary Scan Order 13 Instruction Code DescriptionA11 Maximum Ratings Electrical CharacteristicsOperating Range Package CapacitanceThermal Resistance AC Test Loads and WaveformsOutput Times Switching CharacteristicsSetup Times 250 MHz 200 MHz 167 MHz Parameter Description MinRead Cycle Timing Switching WaveformsWrite Cycle Timing 25 CLZ Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document History Issue Orig. Description of Change DateDocument Number

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.
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