Cypress CY7C1380DV25, CY7C1382DV25, CY7C1380FV25, CY7C1382FV25 manual Write Cycle Timing 25

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CY7C1380DV25, CY7C1380FV25

CY7C1382DV25, CY7C1382FV25

Switching Waveforms (continued)

Write Cycle Timing [25, 26]

t CYC

CLK

tCH

tCL

tADS

tADH

ADSP

tADS

tADH

ADSC extends burst

tADS

tADH

ADSC

tAS

tAH

ADDRESS

Byte write signals are

ignored for ﬁrst cycle when

tWES

tWEH

ADSP initiates burst

BWE,

BW X

tWES tWEH

tCES

tCEH

tADVS

tADVH

ADV

ADV suspends burst

tDS

tDH

Data In (D)

High-Z

D(A1)

D(A2)

D(A2 + 1)

D(A2 + 2)

D(A2 + 3)

D(A3)

D(A3 + 1)

D(A3 + 2)

OEHZ

Data Out (Q)

BURST READ

Single WRITE

BURST WRITE

Extended BURST WRITE

DON’T CARE

UNDEFINED

Note:

26. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW and BWX LOW.

Document #: 38-05546 Rev. *E

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Contents Selection Guide Features250 MHz 200 MHz 167 MHz Unit Cypress Semiconductor CorporationLogic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M x Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K xPin Configurations Pin Tqfp Pinout 3 Chip Enable CY7C1380DV25 512K XCY7C1382DV25 1M x CY7C1380FV25 512K x Pin Configurations Ball BGA PinoutCY7C1380DV25 512K x Pin Configurations Ball Fbga Pinout 3 Chip EnablePin Definitions Power supply inputs to the core of the deviceName Description Byte write select inputs, active LOW. Qualified withSingle Read Accesses Power supply for the IO circuitrySingle Write Accesses Initiated by Adsp Functional OverviewLinear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics Burst SequencesCE1 CE2 CE3 Adsp Adsc ADV Write CLK Operation Add. UsedTruth Table for Read/Write 6 Function CY7C1380DV25/CY7C1380FV25Function CY7C1382DV25/CY7C1382FV25 TAP Controller State Diagram TAP Controller Block DiagramIeee 1149.1 Serial Boundary Scan Jtag TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching CharacteristicsParameter Description Min Max Unit Clock Hold Times5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Output Load Equivalent Identification Register DefinitionsBall BGA Boundary Scan Order 13 Identification CodesInstruction Code Description Bit # Ball IDA11 Electrical Characteristics Maximum RatingsOperating Range Thermal Resistance CapacitanceAC Test Loads and Waveforms PackageSetup Times Switching Characteristics250 MHz 200 MHz 167 MHz Parameter Description Min Output TimesRead Cycle Timing Switching WaveformsWrite Cycle Timing 25 CLZ Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Issue Orig. Description of Change Date Document HistoryDocument Number

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.