Cypress CY7C1380DV25, CY7C1382DV25 Maximum Ratings, Operating Range, Electrical Characteristics

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CY7C1380DV25, CY7C1380FV25 CY7C1382DV25, CY7C1382FV25

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the device. For user guidelines, not tested.

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.3V to +3.6V

Supply Voltage on VDDQ Relative to GND

–0.3V to +VDD

DC Voltage Applied to Outputs

–0.5V to VDDQ + 0.5V

in Tri-State

DC Input Voltage

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

20 mA

Static Discharge Voltage

>2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

>200 mA

Operating Range

 

Ambient

 

Range

Temperature

VDD/VDDQ

Commercial

0°C to +70°C

2.5V ± 5%

Industrial

–40°C to +85°C

 

Electrical Characteristics

Over the Operating Range [16, 17]

Parameter

Description

Test Conditions

Min.

Max.

Unit

 

 

 

 

 

 

 

VDD

Power Supply Voltage

 

 

2.375

2.625

V

VDDQ

IO Supply Voltage

for 2.5V IO

 

2.375

VDD

V

VOH

Output HIGH Voltage

for 2.5V IO, IOH = −1.0 mA

 

2.0

 

V

VOL

Output LOW Voltage

for 2.5V IO, IOL= 1.0 mA

 

 

0.4

V

VIH

Input HIGH Voltage [16]

for 2.5V IO

 

1.7

VDD + 0.3V

V

VIL

Input LOW Voltage [16]

for 2.5V IO

 

–0.3

0.7

V

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

–5

5

∝A

 

except ZZ and MODE

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

∝A

 

 

Input = VDD

 

 

5

∝A

 

Input Current of ZZ

Input = VSS

 

–5

 

∝A

 

 

Input = VDD

 

 

30

∝A

IOZ

Output Leakage Current

GND ≤ VI ≤ VDD, Output Disabled

 

–5

5

∝A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

4.0-ns cycle, 250 MHz

 

350

mA

 

Current

f = fMAX = 1/tCYC

 

 

 

 

 

5.0-ns cycle, 200 MHz

 

300

mA

 

 

 

6.0-ns cycle, 167 MHz

 

275

mA

 

 

 

 

 

 

 

ISB1

Automatic CE

VDD = Max, Device Deselected,

4.0-ns cycle, 250 MHz

 

160

mA

 

Power Down

VIN ≥ VIH or VIN ≤ VIL

 

 

 

 

 

5.0-ns cycle, 200 MHz

 

150

mA

 

Current—TTL Inputs

f = fMAX = 1/tCYC

 

 

 

 

 

6.0-ns cycle, 167 MHz

 

140

mA

 

 

 

 

 

 

 

 

 

 

 

ISB2

Automatic CE

VDD = Max, Device Deselected,

All speeds

 

70

mA

 

Power Down

VIN ≤ 0.3V or VIN > VDDQ – 0.3V,

 

 

 

 

 

Current—CMOS Inputs

f = 0

 

 

 

 

ISB3

Automatic CE

VDD = Max, Device Deselected, or

4.0-ns cycle, 250 MHz

 

135

mA

 

Power Down

VIN ≤ 0.3V or VIN > VDDQ – 0.3V

 

 

 

 

 

5.0-ns cycle, 200 MHz

 

130

mA

 

Current—CMOS Inputs

f = fMAX = 1/tCYC

 

 

 

 

 

6.0-ns cycle, 167 MHz

 

125

mA

 

 

 

 

 

 

 

 

 

 

 

ISB4

Automatic CE

VDD = Max, Device Deselected,

All speeds

 

80

mA

 

Power Down

VIN ≥ VIH or VIN ≤ VIL, f = 0

 

 

 

 

 

Current—TTL Inputs

 

 

 

 

 

Notes:

16.Overshoot: VIH(AC) < VDD +1.5V (pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (pulse width less than tCYC/2).

17.Tpower up: assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05546 Rev. *E

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Contents Selection Guide Features250 MHz 200 MHz 167 MHz Unit Cypress Semiconductor CorporationLogic Block Diagram CY7C1382DV25/CY7C1382FV25 3 1M x Logic Block Diagram CY7C1380DV25/CY7C1380FV25 3 512K xCY7C1382DV25 1M x Pin Configurations Pin Tqfp Pinout 3 Chip EnableCY7C1380DV25 512K X CY7C1380FV25 512K x Pin Configurations Ball BGA PinoutCY7C1380DV25 512K x Pin Configurations Ball Fbga Pinout 3 Chip EnablePin Definitions Power supply inputs to the core of the deviceName Description Byte write select inputs, active LOW. Qualified withSingle Read Accesses Power supply for the IO circuitrySingle Write Accesses Initiated by Adsp Functional OverviewLinear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics Burst SequencesCE1 CE2 CE3 Adsp Adsc ADV Write CLK Operation Add. UsedFunction CY7C1382DV25/CY7C1382FV25 Truth Table for Read/Write 6Function CY7C1380DV25/CY7C1380FV25 Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller State DiagramTAP Controller Block Diagram TAP Instruction Set Bypass RegisterTAP Timing TAP AC Switching CharacteristicsParameter Description Min Max Unit Clock Hold Times5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Output Load Equivalent Identification Register DefinitionsBall BGA Boundary Scan Order 13 Identification CodesInstruction Code Description Bit # Ball IDA11 Operating Range Electrical CharacteristicsMaximum Ratings Thermal Resistance CapacitanceAC Test Loads and Waveforms PackageSetup Times Switching Characteristics250 MHz 200 MHz 167 MHz Parameter Description Min Output TimesRead Cycle Timing Switching WaveformsWrite Cycle Timing 25 CLZ Read/Write Cycle Timing 25, 27DON’T Care ZZ Mode Timing 29Ordering Information CY7C1382DV25-250BZXI Document # 38-05546 Rev. *E Pin Thin Plastic Quad Flat pack 14 x 20 x 1.4 mm Package DiagramsBall BGA 14 x 22 x 2.4 mm Soldernotespad Type NON-SOLDER Mask Defined Nsmd Document Number Issue Orig. Description of Change DateDocument History

CY7C1382DV25, CY7C1380DV25, CY7C1382FV25, CY7C1380FV25 specifications

The Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are high-performance static random access memory (SRAM) devices distinguished by their reliability and efficiency. These components are designed for applications requiring fast data storage and retrieval, making them ideal for embedded systems, communication devices, and various consumer electronics.

One of the main features of these SRAMs is their access time. The CY7C1380FV25 and CY7C1382FV25 models come with a super-fast access time of 25 nanoseconds, ensuring that data can be retrieved with minimal delay. This characteristic is crucial for high-speed applications, such as networking equipment and automotive systems, where rapid data processing is essential.

Both families of devices offer a competitive data width configuration, with CY7C1380 series providing 8 bits and CY7C1382 series providing 16 bits. This flexibility allows designers to choose the appropriate configuration based on their specific application requirements. Additionally, they support a wide voltage range for ease of integration into various systems.

The CY7C1380FV25 and CY7C1380DV25 devices feature low power consumption, which is vital for battery-operated devices. With their advanced CMOS technology, they exhibit reduced static power requirements, helping to prolong battery life and improve overall system efficiency. The IDD (supply current) ratings are particularly low, making them suitable for energy-sensitive applications.

A notable characteristic of the Cypress memory devices is their asynchronous read and write operations, providing simple interfacing in a variety of designs. They are designed to operate under a wide range of temperature conditions; thus, they are well-suited for industrial applications where temperature fluctuations might be a concern.

Furthermore, the CY7C1382FV25 and CY7C1382DV25 models include features like burst mode capability, enabling faster sequential access, which is beneficial for high-speed data processing tasks. This allows these SRAMs to deliver enhanced performance critical in applications like video processing and real-time data acquisition.

In summary, the Cypress CY7C1380FV25, CY7C1382FV25, CY7C1380DV25, and CY7C1382DV25 are distinguished by their fast access times, low power consumption, and flexible data widths. Their advanced technologies and characteristics make them a reliable choice for a diverse range of high-performance applications, ensuring that engineers can effectively address their design challenges while meeting the demands of modern electronics.
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