Cypress CY7C1472V25, CY7C1470V25, CY7C1474V25 manual Maximum Ratings, Operating Range, Ambient Range

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CY7C1470V25

CY7C1472V25

CY7C1474V25

Maximum Ratings

(Above which the useful life may be impaired. For user guide- lines, not tested.)

Storage Temperature

–65°C to +150°C

Ambient Temperature with

 

 

Power Applied

–55°C to +125°C

Supply Voltage on VDD Relative to GND

–0.5V to +3.6V

Supply Voltage on VDDQ Relative to GND

–0.5V to +VDD

DC to Outputs in Tri-State

–0.5V to VDDQ + 0.5V

DC Input Voltage

–0.5V to VDD + 0.5V

Current into Outputs (LOW)

 

20 mA

Static Discharge Voltage

 

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch-up Current

 

> 200 mA

Operating Range

 

 

 

 

 

 

 

Ambient

 

 

Range

Temperature

VDD

VDDQ

Commercial

0°C to +70°C

2.5V –5%/+5%

1.7V to VDD

Industrial

–40°C to +85°C

 

 

 

 

 

 

Electrical Characteristics Over the Operating Range[12, 13]

Parameter

Description

Test Conditions

Min.

Max.

Unit

VDD

Power Supply Voltage

 

 

2.375

2.625

V

VDDQ

I/O Supply Voltage

for 2.5V I/O

 

2.375

VDD

V

 

 

for 1.8V I/O

 

1.7

1.9

V

 

 

 

 

 

 

 

VOH

Output HIGH Voltage

for 2.5V I/O, IOH= −1.0 mA

 

2.0

 

V

 

 

for 1.8V I/O, IOH = –100 ∝A

 

1.6

 

V

VOL

Output LOW Voltage

for 2.5V I/O, IOL= 1.0 mA

 

 

0.4

V

 

 

for 1.8V I/O, IOL= 100 ∝A

 

 

0.2

V

VIH

Input HIGH Voltage[12]

for 2.5V I/O

 

1.7

VDD + 0.3V

V

 

 

for 1.8V I/O

 

1.26

VDD + 0.3V

V

VIL

Input LOW Voltage[12]

for 2.5V I/O

 

–0.3

0.7

V

 

 

for 1.8V I/O

 

–0.3

0.36

V

 

 

 

 

 

 

 

IX

Input Leakage Current

GND ≤ VI ≤ VDDQ

 

–5

5

∝A

 

except ZZ and MODE

 

 

 

 

 

 

Input Current of MODE

Input = VSS

 

–30

 

∝A

 

 

Input = VDD

 

 

5

∝A

 

Input Current of ZZ

Input = VSS

 

–5

 

∝A

 

 

Input = VDD

 

 

30

∝A

IOZ

Output Leakage Current

GND ≤ VI ≤ VDDQ, Output Disabled

–5

5

∝A

IDD

VDD Operating Supply

VDD = Max., IOUT = 0 mA,

4.0-ns cycle, 250 MHz

 

450

mA

 

 

f = fMAX = 1/tCYC

 

 

 

 

 

 

5.0-ns cycle, 200 MHz

 

450

mA

 

 

 

6.0-ns cycle, 167 MHz

 

400

mA

 

 

 

 

 

 

 

ISB1

Automatic CE

Max. VDD, Device Deselected,

4.0-ns cycle, 250MHz

 

200

mA

 

Power-down

VIN ≥ VIH or VIN ≤ VIL,

 

 

 

 

 

5.0-ns cycle, 200 MHz

 

200

mA

 

Current—TTL Inputs

f = fMAX = 1/tCYC

 

 

 

 

 

6.0-ns cycle, 167 MHz

 

200

mA

 

 

 

 

 

 

 

 

 

 

 

ISB2

Automatic CE

Max. VDD, Device Deselected,

All speed grades

 

120

mA

 

Power-down

VIN ≤ 0.3V or

 

 

 

 

 

Current—CMOS Inputs

VIN > VDDQ − 0.3V, f = 0

 

 

 

 

ISB3

Automatic CE

Max. VDD, Device Deselected,

4.0-ns cycle, 250 MHz

 

200

mA

 

Power-down

VIN ≤ 0.3V or

 

 

 

 

 

5.0-ns cycle, 200 MHz

 

200

mA

 

Current—CMOS Inputs

VIN > VDDQ − 0.3V,

 

 

 

 

 

6.0-ns cycle, 167 MHz

 

200

mA

 

 

f = fMAX = 1/tCYC

 

ISB4

Automatic CE

Max. VDD, Device Deselected,

All speed grades

 

135

mA

 

Power-down

VIN ≥ VIH or VIN ≤ VIL, f = 0

 

 

 

 

 

Current—TTL Inputs

 

 

 

 

 

Notes:

12.Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2).

13.TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD.

Document #: 38-05290 Rev. *I

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Contents Logic Block Diagram-CY7C1470V25 2M x FeaturesFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1474V25 1M x Logic Block Diagram-CY7C1472V25 4M xSelection Guide 250 MHz 200 MHz 167 MHz Unit4M × Pin Configurations Pin Tqfp PinoutCY7C1472V25 4M x Byte Write Select Inputs, active L OW . Qualified with Pin DefinitionsPin Name Type Pin Description Clock input to the Jtag circuitry Power supply inputs to the core of the devicePower supply for the I/O circuitry Burst Read Accesses Single Read AccessesSingle Write Accesses Burst Write AccessesZZ Mode Electrical Characteristics Linear Burst Address Table Mode = GNDInterleaved Burst Address Table Mode = Floating or VDD Function CY7C1470V25 BW d BW c BW b BW a Partial Write Cycle Description1, 2, 3Function CY7C1472V25 Function CY7C1474V25Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller Block Diagram TAP Controller State DiagramTAP Instruction Set Instruction RegisterTAP Timing TAP AC Switching Characteristics Over the Operating Range9Parameter Description Min Max Unit Clock Output Times5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions8V TAP AC Test Conditions Identification Register DefinitionsIdentification Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Ball ID Boundary Scan Exit Order 2M xBoundary Scan Exit Order 4M x A11 Boundary Scan Exit Order 1M xJ10 W10Maximum Ratings Electrical Characteristics Over the Operating Range12Operating Range Ambient RangeAC Test Loads and Waveforms Capacitance14Thermal Resistance14 Set-up Times Switching Characteristics Over the Operating Range 15250 200 167 Parameter Description Unit Min Max Read/Write/Timing21, 22 Switching WaveformsAddress A1 A2 DON’T CareNOP, Stall and Deselect Cycles21, 22 ZZ Mode Timing25Ordering Information 250 Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History ECN No Issue Date Orig. Description of ChangeVKN 472335 See ECN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.
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