Cypress CY7C1472V25, CY7C1470V25, CY7C1474V25 manual Pin Definitions, Pin Name Type Pin Description

Page 5

CY7C1470V25

CY7C1472V25

CY7C1474V25

Pin Configurations (continued)

209-ball FBGA (14 x 22 x 1.76 mm) Pinout

CY7C1474V25 (1M x 72)

 

1

2

3

 

 

4

 

5

6

 

 

 

 

 

 

7

8

 

 

9

 

 

10

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

DQg

DQg

 

 

A

 

CE2

A

 

 

 

 

 

A

 

 

 

3

 

 

A

DQb

DQb

 

 

 

ADV/LD

 

 

CE

 

 

B

DQg

DQg

 

 

 

 

c

 

 

g

NC

 

 

 

 

 

A

 

 

 

 

b

 

 

 

 

f

DQb

DQb

BWS

BWS

WE

 

BWS

BWS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

DQg

DQg

 

 

h

 

 

d

NC/576M

 

 

 

 

1

 

NC

 

 

 

 

e

 

 

a

DQb

DQb

BWS

BWS

CE

 

BWS

BWS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

DQg

DQg

 

 

VSS

 

NC

NC/1G

 

 

 

 

 

 

 

 

 

NC

 

 

NC

 

 

VSS

DQb

DQb

 

 

 

 

 

 

OE

 

 

 

E

DQPg

DQPc

 

 

VDDQ

 

VDDQ

VDD

 

 

VDD

VDD

 

VDDQ

 

 

VDDQ

DQPf

DQPb

F

DQc

DQc

 

 

VSS

 

VSS

VSS

 

 

 

NC

VSS

 

 

VSS

 

 

VSS

DQf

DQf

G

DQc

DQc

 

 

VDDQ

 

VDDQ

VDD

 

 

 

NC

VDD

 

VDDQ

 

 

VDDQ

DQf

DQf

H

DQc

DQc

 

 

VSS

 

VSS

VSS

 

 

 

NC

VSS

 

 

VSS

 

 

VSS

DQf

DQf

 

 

 

 

 

 

 

 

 

 

 

J

DQc

DQc

 

 

VDDQ

 

VDDQ

VDD

 

 

 

NC

VDD

 

VDDQ

 

 

VDDQ

DQf

DQf

K

NC

NC

 

 

CLK

 

NC

VSS

 

 

 

 

 

 

 

 

 

 

VSS

 

 

 

 

 

 

 

 

 

 

 

 

 

CEN

 

 

NC

 

 

NC

NC

NC

L

DQh

DQh

 

 

VDDQ

 

VDDQ

VDD

 

 

 

NC

VDD

 

VDDQ

 

 

VDDQ

DQa

DQa

M

DQh

DQh

 

 

VSS

 

VSS

VSS

 

 

 

NC

VSS

 

 

VSS

 

 

VSS

DQa

DQa

N

DQh

DQh

 

 

VDDQ

 

VDDQ

VDD

 

 

 

NC

VDD

 

VDDQ

 

 

VDDQ

DQa

DQa

P

DQh

DQh

 

 

VSS

 

VSS

VSS

 

 

 

ZZ

VSS

 

 

VSS

 

 

VSS

DQa

DQa

R

DQPd

DQPh

 

 

VDDQ

 

VDDQ

VDD

 

 

VDD

VDD

 

VDDQ

 

 

VDDQ

DQPa

DQPe

T

DQd

DQd

 

 

VSS

 

NC

NC

MODE

NC

 

 

NC

 

 

VSS

DQe

DQe

U

DQd

DQd

NC/144M

 

A

A

 

 

 

A

A

 

 

A

NC/288M

DQe

DQe

V

DQd

DQd

 

 

A

 

A

A

 

 

 

A1

A

 

 

A

 

 

A

DQe

DQe

W

DQd

DQd

 

 

TMS

 

TDI

A

 

 

 

A0

A

 

TDO

 

 

TCK

DQe

DQe

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

Pin Name

I/O Type

Pin Description

 

 

 

 

 

A0

Input-

Address Inputs used to select one of the address locations. Sampled at the rising edge of

 

A1

Synchronous

the CLK.

 

A

 

 

 

 

 

 

 

 

a

Input-

Byte Write Select Inputs, active LOW. Qualified with

 

to conduct writes to the SRAM.

 

BW

WE

 

BWb

Synchronous

Sampled on the rising edge of CLK. BWa controls DQa and DQPa, BWb controls DQb and DQPb,

 

BWc

 

BWc controls DQc and DQPc, BWd controls DQd and DQPd, BWe controls DQe and DQPe, BWf

 

BWd

 

controls DQf and DQPf, BWg controls DQg and DQPg, BWh controls DQh and DQPh.

 

BWe

 

 

 

 

 

 

 

BWf

 

 

 

 

 

 

 

BWg

 

 

 

 

 

 

 

BWh

 

 

 

 

 

 

 

 

 

 

Input-

Write Enable Input, active LOW. Sampled on the rising edge of CLK if

 

is active LOW. This

 

WE

CEN

 

 

 

 

Synchronous

signal must be asserted LOW to initiate a write sequence.

Document #: 38-05290 Rev. *I

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Contents Logic Block Diagram-CY7C1470V25 2M x FeaturesFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1474V25 1M x Logic Block Diagram-CY7C1472V25 4M xSelection Guide 250 MHz 200 MHz 167 MHz Unit4M × Pin Configurations Pin Tqfp PinoutCY7C1472V25 4M x Byte Write Select Inputs, active L OW . Qualified with Pin DefinitionsPin Name Type Pin Description Clock input to the Jtag circuitry Power supply inputs to the core of the devicePower supply for the I/O circuitry Burst Read Accesses Single Read AccessesSingle Write Accesses Burst Write AccessesZZ Mode Electrical Characteristics Linear Burst Address Table Mode = GNDInterleaved Burst Address Table Mode = Floating or VDD Function CY7C1470V25 BW d BW c BW b BW a Partial Write Cycle Description1, 2, 3Function CY7C1472V25 Function CY7C1474V25Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller Block Diagram TAP Controller State DiagramTAP Instruction Set Instruction RegisterTAP Timing TAP AC Switching Characteristics Over the Operating Range9Parameter Description Min Max Unit Clock Output Times5V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions8V TAP AC Test Conditions Identification Register DefinitionsIdentification Codes Scan Register SizesRegister Name Bit Size Instruction Code DescriptionBit # Ball ID Boundary Scan Exit Order 2M xBoundary Scan Exit Order 4M x A11 Boundary Scan Exit Order 1M xJ10 W10Maximum Ratings Electrical Characteristics Over the Operating Range12Operating Range Ambient RangeAC Test Loads and Waveforms Capacitance14Thermal Resistance14 Set-up Times Switching Characteristics Over the Operating Range 15250 200 167 Parameter Description Unit Min Max Read/Write/Timing21, 22 Switching WaveformsAddress A1 A2 DON’T CareNOP, Stall and Deselect Cycles21, 22 ZZ Mode Timing25Ordering Information 250 Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History ECN No Issue Date Orig. Description of ChangeVKN 472335 See ECN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.
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