Cypress CY7C1472V25 manual Switching Waveforms, Read/Write/Timing21, 22, Address A1 A2, DON’T Care

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CY7C1470V25

CY7C1472V25

CY7C1474V25

Switching Waveforms

Read/Write/Timing[21, 22, 23]

1	2 t CYC 3
CLK
tCENS tCENH	tCH tCL

CEN

tCES tCEH

ADV/LD

BWx

ADDRESS A1 A2

4	5	6	7

A3	A4	A5
	tCO

8 9

A6 A7

tAS tAH

tDS tDH

tCLZ

tDOH

tOEV tCHZ

Data

D(A1)

In-Out (DQ)

D(A2) D(A2+1) Q(A3) Q(A4)

tOEHZ

Q(A4+1) D(A5)

tDOH tOELZ

Q(A6)

WRITE	WRITE	BURST
D(A1)	D(A2)	WRITE
		D(A2+1)

READ	READ	BURST	WRITE	READ	WRITE
Q(A3)	Q(A4)	READ	D(A5)	Q(A6)	D(A7)
		Q(A4+1)

DESELECT

DON’T CARE

UNDEFINED

Notes:

21.For this waveform ZZ is tied LOW.

22.When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH,CE1 is HIGH or CE2 is LOW or CE3 is HIGH.

23.Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved).Burst operations are optional.

Document #: 38-05290 Rev. *I

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Contents Features Logic Block Diagram-CY7C1470V25 2M xFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1472V25 4M x Logic Block Diagram-CY7C1474V25 1M xSelection Guide 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 4M ×CY7C1472V25 4M x Byte Write Select Inputs, active L OW . Qualified with Pin DefinitionsPin Name Type Pin Description Clock input to the Jtag circuitry Power supply inputs to the core of the devicePower supply for the I/O circuitry Single Read Accesses Burst Read AccessesSingle Write Accesses Burst Write AccessesZZ Mode Electrical Characteristics Linear Burst Address Table Mode = GNDInterleaved Burst Address Table Mode = Floating or VDD Partial Write Cycle Description1, 2, 3 Function CY7C1470V25 BW d BW c BW b BW aFunction CY7C1472V25 Function CY7C1474V25TAP Controller Block Diagram TAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagInstruction Register TAP Instruction SetTAP AC Switching Characteristics Over the Operating Range9 TAP TimingParameter Description Min Max Unit Clock Output TimesTAP DC Electrical Characteristics And Operating Conditions 5V TAP AC Test Conditions8V TAP AC Test Conditions Identification Register DefinitionsScan Register Sizes Identification CodesRegister Name Bit Size Instruction Code DescriptionBit # Ball ID Boundary Scan Exit Order 2M xBoundary Scan Exit Order 4M x Boundary Scan Exit Order 1M x A11J10 W10Electrical Characteristics Over the Operating Range12 Maximum RatingsOperating Range Ambient RangeAC Test Loads and Waveforms Capacitance14Thermal Resistance14 Set-up Times Switching Characteristics Over the Operating Range 15250 200 167 Parameter Description Unit Min Max Switching Waveforms Read/Write/Timing21, 22Address A1 A2 DON’T CareZZ Mode Timing25 NOP, Stall and Deselect Cycles21, 22Ordering Information 250 Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document History472335 See ECN VKN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.