Cypress CY7C1472V25, CY7C1470V25, CY7C1474V25 manual Ball Fbga 14 x 22 x 1.76 mm

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CY7C1470V25

CY7C1472V25

CY7C1474V25

Package Diagrams (continued)

209-Ball FBGA (14 x 22 x 1.76 mm) (51-85167)

51-85167-**

NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology, Inc. All product and company names mentioned in this document are the trademarks of their respective holders.

Document #: 38-05290 Rev. *I

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© Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

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Contents Functional Description FeaturesLogic Block Diagram-CY7C1470V25 2M x Cypress Semiconductor CorporationSelection Guide Logic Block Diagram-CY7C1472V25 4M xLogic Block Diagram-CY7C1474V25 1M x 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 4M ×CY7C1472V25 4M x Byte Write Select Inputs, active L OW . Qualified with Pin DefinitionsPin Name Type Pin Description Clock input to the Jtag circuitry Power supply inputs to the core of the devicePower supply for the I/O circuitry Single Write Accesses Single Read AccessesBurst Read Accesses Burst Write AccessesZZ Mode Electrical Characteristics Linear Burst Address Table Mode = GNDInterleaved Burst Address Table Mode = Floating or VDD Function CY7C1472V25 Partial Write Cycle Description1, 2, 3Function CY7C1470V25 BW d BW c BW b BW a Function CY7C1474V25TAP Controller Block Diagram TAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagInstruction Register TAP Instruction SetParameter Description Min Max Unit Clock TAP AC Switching Characteristics Over the Operating Range9TAP Timing Output Times8V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsRegister Name Bit Size Scan Register SizesIdentification Codes Instruction Code DescriptionBit # Ball ID Boundary Scan Exit Order 2M xBoundary Scan Exit Order 4M x J10 Boundary Scan Exit Order 1M xA11 W10Operating Range Electrical Characteristics Over the Operating Range12Maximum Ratings Ambient RangeAC Test Loads and Waveforms Capacitance14Thermal Resistance14 Set-up Times Switching Characteristics Over the Operating Range 15250 200 167 Parameter Description Unit Min Max Address A1 A2 Switching WaveformsRead/Write/Timing21, 22 DON’T CareZZ Mode Timing25 NOP, Stall and Deselect Cycles21, 22Ordering Information 250 Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document History472335 See ECN VKN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.
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