Cypress CY7C1474V25, CY7C1470V25, CY7C1472V25 manual See ECN, Vkn

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CY7C1470V25

CY7C1472V25

CY7C1474V25

Document Title: CY7C1470V25/CY7C1472V25/CY7C1474V25 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture

Document Number: 38-05290

472335

See ECN

VKN

Corrected the typo in the pin configuration for 209-Ball FBGA pinout (Corrected the ball name for H9 to VSS from VSSQ).

Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND. Changed tTH, tTL from 25 ns to 20 ns and tTDOV from 5 ns to 10 ns in TAP AC Switching Characteristics table.

Updated the Ordering Information table.

Document #: 38-05290 Rev. *I

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Contents Features Logic Block Diagram-CY7C1470V25 2M xFunctional Description Cypress Semiconductor CorporationLogic Block Diagram-CY7C1472V25 4M x Logic Block Diagram-CY7C1474V25 1M xSelection Guide 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 4M ×CY7C1472V25 4M x Pin Name Type Pin Description Pin DefinitionsByte Write Select Inputs, active L OW . Qualified with Power supply for the I/O circuitry Power supply inputs to the core of the deviceClock input to the Jtag circuitry Single Read Accesses Burst Read AccessesSingle Write Accesses Burst Write AccessesInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Partial Write Cycle Description1, 2, 3 Function CY7C1470V25 BW d BW c BW b BW aFunction CY7C1472V25 Function CY7C1474V25TAP Controller Block Diagram TAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagInstruction Register TAP Instruction SetTAP AC Switching Characteristics Over the Operating Range9 TAP TimingParameter Description Min Max Unit Clock Output TimesTAP DC Electrical Characteristics And Operating Conditions 5V TAP AC Test Conditions8V TAP AC Test Conditions Identification Register DefinitionsScan Register Sizes Identification CodesRegister Name Bit Size Instruction Code DescriptionBoundary Scan Exit Order 4M x Boundary Scan Exit Order 2M xBit # Ball ID Boundary Scan Exit Order 1M x A11J10 W10Electrical Characteristics Over the Operating Range12 Maximum RatingsOperating Range Ambient RangeThermal Resistance14 Capacitance14AC Test Loads and Waveforms 250 200 167 Parameter Description Unit Min Max Switching Characteristics Over the Operating Range 15Set-up Times Switching Waveforms Read/Write/Timing21, 22Address A1 A2 DON’T CareZZ Mode Timing25 NOP, Stall and Deselect Cycles21, 22Ordering Information 250 Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document History472335 See ECN VKN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.