Cypress CY7C1470V25, CY7C1474V25 Capacitance14, Thermal Resistance14, AC Test Loads and Waveforms

Page 18

CY7C1470V25

CY7C1472V25

CY7C1474V25

Capacitance[14]

Parameter

Description

Test Conditions

100 TQFP

165 FBGA

209 FBGA

Unit

Max.

Max.

Max.

 

 

 

 

 

 

 

CADDRESS

Address Input Capacitance

TA = 25°C, f = 1 MHz,

6

6

6

pF

 

 

VDD = 2.5V

 

 

 

 

CDATA

Data Input Capacitance

5

5

5

pF

 

 

VDDQ = 2.5V

 

 

 

 

CCTRL

Control Input Capacitance

8

8

8

pF

 

CCLK

Clock Input Capacitance

 

6

6

6

pF

CI/O

Input/Output Capacitance

 

5

5

5

pF

Thermal Resistance[14]

Parameter

Description

 

Test Conditions

100 TQFP

165 FBGA

209 FBGA

Unit

 

Package

Package

Package

 

 

 

 

 

 

 

 

ΘJA

Thermal Resistance

 

Test conditions follow standard

24.63

16.3

15.2

°C/W

 

(Junction to Ambient)

 

test methods and procedures for

 

 

 

 

 

 

 

measuring thermal impedance,

 

 

 

 

Θ

Thermal Resistance

 

2.28

2.1

1.7

°C/W

JC

(Junction to Case)

 

per EIA/JESD51.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Test Loads and Waveforms

 

 

 

 

 

2.5V I/O Test Load

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

2.5V

 

 

 

R = 1667Ω

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

 

 

 

 

 

 

 

 

 

 

Z0

= 50Ω

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL = 50Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

10%

 

 

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 1538Ω

≤ 1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VL = 1.25V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

JIG AND

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

1.8V I/O Test Load

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

1.8V

 

 

 

R = 14 KΩ

 

 

 

 

 

ALL INPUT PULSES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDDQ

- 0.2

 

 

 

 

 

 

 

 

Z0

= 50Ω

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL = 50Ω

 

 

0.2

10%

 

 

90%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R = 14 KΩ

≤ 1 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VL =0.9V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INCLUDING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(c)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(a)

JIG AND

 

(b)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCOPE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note:

14. Tested initially and after any design or process changes that may affect these parameters.

90%

10%

≤ 1 ns

90%

10%

≤ 1 ns

Document #: 38-05290 Rev. *I

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Contents Functional Description FeaturesLogic Block Diagram-CY7C1470V25 2M x Cypress Semiconductor CorporationSelection Guide Logic Block Diagram-CY7C1472V25 4M xLogic Block Diagram-CY7C1474V25 1M x 250 MHz 200 MHz 167 MHz UnitPin Configurations Pin Tqfp Pinout 4M ×CY7C1472V25 4M x Pin Definitions Pin Name Type Pin DescriptionByte Write Select Inputs, active L OW . Qualified with Power supply inputs to the core of the device Power supply for the I/O circuitryClock input to the Jtag circuitry Single Write Accesses Single Read AccessesBurst Read Accesses Burst Write AccessesLinear Burst Address Table Mode = GND Interleaved Burst Address Table Mode = Floating or VDDZZ Mode Electrical Characteristics Function CY7C1472V25 Partial Write Cycle Description1, 2, 3Function CY7C1470V25 BW d BW c BW b BW a Function CY7C1474V25TAP Controller Block Diagram TAP Controller State Diagram Ieee 1149.1 Serial Boundary Scan JtagInstruction Register TAP Instruction SetParameter Description Min Max Unit Clock TAP AC Switching Characteristics Over the Operating Range9TAP Timing Output Times8V TAP AC Test Conditions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions Identification Register DefinitionsRegister Name Bit Size Scan Register SizesIdentification Codes Instruction Code DescriptionBoundary Scan Exit Order 2M x Boundary Scan Exit Order 4M xBit # Ball ID J10 Boundary Scan Exit Order 1M xA11 W10Operating Range Electrical Characteristics Over the Operating Range12Maximum Ratings Ambient RangeCapacitance14 Thermal Resistance14AC Test Loads and Waveforms Switching Characteristics Over the Operating Range 15 250 200 167 Parameter Description Unit Min MaxSet-up Times Address A1 A2 Switching WaveformsRead/Write/Timing21, 22 DON’T CareZZ Mode Timing25 NOP, Stall and Deselect Cycles21, 22Ordering Information 250 Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm ECN No Issue Date Orig. Description of Change Document History472335 See ECN VKN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.
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