Cypress CY7C1474V25 manual Switching Characteristics Over the Operating Range 15, Set-up Times

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CY7C1470V25

CY7C1472V25

CY7C1474V25

Switching Characteristics Over the Operating Range [15, 16]

 

 

 

 

 

 

 

 

 

 

–250

–200

–167

 

Parameter

 

 

 

 

 

 

 

 

Description

 

 

 

 

 

 

Unit

 

 

 

 

 

 

 

 

Min.

Max.

Min.

Max.

Min.

Max.

 

 

 

 

 

 

 

 

 

 

tPower[17]

 

VCC (typical) to the First Access Read or Write

1

 

1

 

1

 

ms

Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

 

Clock Cycle Time

4.0

 

5.0

 

6.0

 

ns

FMAX

 

Maximum Operating Frequency

 

250

 

200

 

167

MHz

tCH

 

Clock HIGH

2.0

 

2.0

 

2.2

 

ns

tCL

 

Clock LOW

2.0

 

2.0

 

2.2

 

ns

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

 

Data Output Valid After CLK Rise

 

3.0

 

3.0

 

3.4

ns

tOEV

 

 

 

LOW to Output Valid

 

3.0

 

3.0

 

3.4

ns

OE

 

 

tDOH

 

Data Output Hold After CLK Rise

1.3

 

1.3

 

1.5

 

ns

tCHZ

 

Clock to High-Z[18, 19, 20]

 

3.0

 

3.0

 

3.4

ns

tCLZ

 

Clock to Low-Z[18, 19, 20]

1.3

 

1.3

 

1.5

 

ns

tEOHZ

 

 

 

HIGH to Output High-Z[18, 19, 20]

 

3.0

 

3.0

 

3.4

ns

OE

 

 

tEOLZ

 

 

 

LOW to Output Low-Z[18, 19, 20]

0

 

0

 

0

 

ns

OE

 

 

Set-up Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAS

 

Address Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

tDS

 

Data Input Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

tCENS

 

 

 

 

 

 

Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

CEN

 

 

tWES

 

 

 

 

 

 

 

x Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

WE,

BW

 

 

tALS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Set-up Before CLK Rise

1.4

 

1.4

 

1.5

 

ns

tCES

 

Chip Select Set-up

1.4

 

1.4

 

1.5

 

ns

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tAH

 

Address Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

tDH

 

Data Input Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

tCENH

 

 

 

 

Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

CEN

 

 

tWEH

 

 

 

 

 

 

 

x Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

WE,

BW

 

 

tALH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV/LD

Hold after CLK Rise

0.4

 

0.4

 

0.5

 

ns

tCEH

 

Chip Select Hold After CLK Rise

0.4

 

0.4

 

0.5

 

ns

Notes:

15.Timing reference is 1.25V when VDDQ = 2.5V and 0.9V when VDDQ = 1.8V.

16.Test conditions shown in (a) of AC Test Loads unless otherwise noted.

17.This part has a voltage regulator internally; tpower is the time power needs to be supplied above VDD minimum initially, before a Read or Write operation can be initiated.

18.tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

19.At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions.

20.This parameter is sampled and not 100% tested.

Document #: 38-05290 Rev. *I

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram-CY7C1470V25 2M x Functional Description250 MHz 200 MHz 167 MHz Unit Logic Block Diagram-CY7C1472V25 4M xLogic Block Diagram-CY7C1474V25 1M x Selection Guide4M × Pin Configurations Pin Tqfp PinoutCY7C1472V25 4M x Pin Name Type Pin Description Pin DefinitionsByte Write Select Inputs, active L OW . Qualified with Power supply for the I/O circuitry Power supply inputs to the core of the deviceClock input to the Jtag circuitry Burst Write Accesses Single Read AccessesBurst Read Accesses Single Write AccessesInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Function CY7C1474V25 Partial Write Cycle Description1, 2, 3Function CY7C1470V25 BW d BW c BW b BW a Function CY7C1472V25Ieee 1149.1 Serial Boundary Scan Jtag TAP Controller Block Diagram TAP Controller State DiagramTAP Instruction Set Instruction RegisterOutput Times TAP AC Switching Characteristics Over the Operating Range9TAP Timing Parameter Description Min Max Unit ClockIdentification Register Definitions TAP DC Electrical Characteristics And Operating Conditions5V TAP AC Test Conditions 8V TAP AC Test ConditionsInstruction Code Description Scan Register SizesIdentification Codes Register Name Bit SizeBoundary Scan Exit Order 4M x Boundary Scan Exit Order 2M xBit # Ball ID W10 Boundary Scan Exit Order 1M xA11 J10Ambient Range Electrical Characteristics Over the Operating Range12Maximum Ratings Operating RangeThermal Resistance14 Capacitance14AC Test Loads and Waveforms 250 200 167 Parameter Description Unit Min Max Switching Characteristics Over the Operating Range 15Set-up Times DON’T Care Switching WaveformsRead/Write/Timing21, 22 Address A1 A2NOP, Stall and Deselect Cycles21, 22 ZZ Mode Timing25Ordering Information 250 Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mm Package DiagramsBall Fbga 15 x 17 x 1.4 mm Ball Fbga 14 x 22 x 1.76 mm Document History ECN No Issue Date Orig. Description of ChangeVKN 472335 See ECN

CY7C1474V25, CY7C1470V25, CY7C1472V25 specifications

The Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 are part of Cypress Semiconductor’s family of high-performance synchronous static random-access memory (SRAM) solutions. These memory devices are designed specifically for applications that require fast access times and high bandwidth, making them ideal for a variety of consumer and industrial applications.

One of the standout features of these SRAMs is their performance. They provide high-speed access times, with data transfer rates that can reach up to 1 GHz. This performance is particularly beneficial for high-speed applications including networking equipment, telecommunications, and video processing systems. The CY7C1470V25, for example, offers a 256K x 16 configuration with an access time as low as 3.5 ns. Similarly, the CY7C1474V25 and CY7C1472V25 variants provide respective memory sizes of 1M x 16 and 512K x 16, catering to diverse memory application needs.

These SRAMs utilize a synchronous interface, which provides greater control over data transfers and synchronization with external clock signals. This synchronous operation allows for more efficient data handling in high-speed environments, reducing latency and improving system performance overall.

In terms of power consumption, the Cypress CY7C147x series is designed to operate efficiently. With a low operating voltage of 2.5V, these devices minimize energy usage while still delivering high-speed performance. The low standby power makes them suitable for battery-operated devices, as well as for systems where energy efficiency is a priority.

Furthermore, these SRAMs come with built-in features such as burst mode, which allows for sequential data access, enhancing read and write operations. This is especially useful in applications requiring rapid data retrieval.

The packaging options for the CY7C1470V25, CY7C1474V25, and CY7C1472V25 include both fine-pitch ball grid array (FBGA) and other configurations, facilitating easy integration into various circuit board layouts.

In conclusion, the Cypress CY7C1470V25, CY7C1474V25, and CY7C1472V25 SRAMs are powerful memory solutions that combine high-speed performance, low power consumption, and a synchronous interface. Their robust design makes them suitable for a wide array of applications ranging from communications to consumer electronics, ensuring they meet the demands of modern technology.
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