Cypress CY7C1522AV18, CY7C1529AV18, CY7C1524AV18, CY7C1523AV18 manual TAP Controller State Diagram

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CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

TAP Controller State Diagram

The state diagram for the TAP controller follows. [9]

TEST-LOGIC RESET

TEST-LOGIC/ IDLE

1		1	1
1	SELECT	1	SELECT
	DR-SCAN		IR-SCAN
	0		0
	1		1

CAPTURE-DR		CAPTURE-IR
0		0
SHIFT-DR	0	SHIFT-IR	0
1		1
EXIT1-DR	1	EXIT1-IR	1
EXIT1-DR		EXIT1-IR
0		0
PAUSE-DR	0	PAUSE-IR	0
1		1
0		0
EXIT2-DR		EXIT2-IR
1		1
UPDATE-DR		UPDATE-IR
1		1
0		0

Note

9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.

Document #: 001-06981 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideCLK Logic Block Diagram CY7C1522AV18Doff Logic Block Diagram CY7C1523AV18 Logic Block Diagram CY7C1524AV18CY7C1522AV18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1529AV18 8M xCY7C1523AV18 4M x CY7C1524AV18 2M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Application Example Application ExampleLD R/W Truth TableWrite Cycle Descriptions BWS0/ BWS1 NWS0 NWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TDI TAP Controller Block DiagramTAP Electrical Characteristics TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitLOW Switching CharacteristicsHigh Static to DLL Reset DLL TimingBurst Switching WaveformsNOP Read Write Ordering Information 250 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.