Cypress CY7C1523AV18 Referenced with Respect to, TDO for Jtag, TCK Pin for Jtag, TDI Pin for Jtag

Page 7

 

 

 

 

 

 

 

 

 

 

CY7C1522AV18, CY7C1529AV18

 

 

 

 

 

 

 

 

 

 

CY7C1523AV18, CY7C1524AV18

 

 

 

 

 

 

 

 

 

 

Pin Definitions (continued)

 

 

 

 

 

 

 

 

 

 

Pin Name

IO

 

 

 

 

 

Pin Description

 

CQ

Echo Clock

CQ Referenced with Respect to C. This is a free-running clock and is synchronized to the input clock

 

 

 

 

 

for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings

 

 

 

 

 

for the echo clocks is shown in the Switching Characteristics on page 23.

 

 

 

 

Echo Clock

 

Referenced with Respect to

 

. This is a free-running clock and is synchronized to the input clock

 

CQ

 

 

CQ

C

 

 

 

 

 

for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings

 

 

 

 

 

for the echo clocks is shown in the Switching Characteristics on page 23.

 

ZQ

Input

Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus

 

 

 

 

 

impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected

 

 

 

 

 

between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the

 

 

 

 

 

minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.

 

 

 

 

Input

DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing

 

DOFF

 

 

 

 

 

in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin

 

 

 

 

 

can be connected to a pull up through a 10-Kohm or less pull up resistor. The device behaves in DDR-I

 

 

 

 

 

mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167

 

 

 

 

 

MHz with DDR-I timing.

 

TDO

Output

TDO for JTAG.

 

 

 

 

 

TCK

Input

TCK Pin for JTAG.

 

 

 

 

 

TDI

Input

TDI Pin for JTAG.

 

 

 

 

 

TMS

Input

TMS Pin for JTAG.

 

 

 

 

 

NC

N/A

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

NC/144M

N/A

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

NC/288M

N/A

Not Connected to the Die. Can be tied to any voltage level.

 

 

 

 

 

VREF

Input-

Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC

 

 

 

 

Reference

measurement points.

 

 

 

 

 

VDD

Power Supply

Power Supply Inputs to the Core of the Device.

 

VSS

Ground

Ground for the Device.

 

VDDQ

Power Supply

Power Supply Inputs for the Outputs of the Device.

Document #: 001-06981 Rev. *D

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Contents Selection Guide FeaturesConfigurations Functional DescriptionDoff Logic Block Diagram CY7C1522AV18CLK Logic Block Diagram CY7C1524AV18 Logic Block Diagram CY7C1523AV18CY7C1529AV18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1522AV18 8M xCY7C1524AV18 2M x CY7C1523AV18 4M xPin Name Pin Description Pin DefinitionsSynchronous Read/Write Input. When TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Application Example Application ExampleBWS0/ BWS1 NWS0 NWS1 Truth TableWrite Cycle Descriptions LD R/WBWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TCK TAP Controller Block DiagramTAP Electrical Characteristics TDITAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in DDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitHigh Switching CharacteristicsLOW DLL Timing Static to DLL ResetNOP Read Write Switching WaveformsBurst Ordering Information 250 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramREV ECN no Submission ORIG. Description of Change Date Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions Document History

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
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