Cypress CY7C1522AV18, CY7C1529AV18, CY7C1524AV18, CY7C1523AV18 Boundary Scan Order, Bit # Bump ID

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CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Boundary Scan Order

Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID	Bit #	Bump ID
0	6R	28	10G	56	6A	84	1J

1	6P	29	9G	57	5B	85	2J

2	6N	30	11F	58	5A	86	3K

3	7P	31	11G	59	4A	87	3J

4	7N	32	9F	60	5C	88	2K

5	7R	33	10F	61	4B	89	1K

6	8R	34	11E	62	3A	90	2L

7	8P	35	10E	63	2A	91	3L

8	9R	36	10D	64	1A	92	1M

9	11P	37	9E	65	2B	93	1L

10	10P	38	10C	66	3B	94	3N

11	10N	39	11D	67	1C	95	3M

12	9P	40	9C	68	1B	96	1N

13	10M	41	9D	69	3D	97	2M

14	11N	42	11B	70	3C	98	3P

15	9M	43	11C	71	1D	99	2N

16	9N	44	9B	72	2C	100	2P

17	11L	45	10B	73	3E	101	1P

18	11M	46	11A	74	2D	102	3R

19	9L	47	10A	75	2E	103	4R

20	10L	48	9A	76	1E	104	4P

21	11K	49	8B	77	2F	105	5P

22	10K	50	7C	78	3F	106	5N

23	9J	51	6C	79	1G	107	5R

24	9K	52	8A	80	1F	108	Internal

25	10J	53	7A	81	3G

26	11J	54	7B	82	2G

27	11H	55	6B	83	1H

Document #: 001-06981 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1522AV18 DoffCLK Logic Block Diagram CY7C1523AV18 Logic Block Diagram CY7C1524AV18CY7C1522AV18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1529AV18 8M xCY7C1523AV18 4M x CY7C1524AV18 2M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Application Example Application ExampleLD R/W Truth TableWrite Cycle Descriptions BWS0/ BWS1 NWS0 NWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TDI TAP Controller Block DiagramTAP Electrical Characteristics TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitSwitching Characteristics HighLOW Static to DLL Reset DLL TimingSwitching Waveforms NOP Read WriteBurst Ordering Information 250 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.