Cypress CY7C1523AV18, CY7C1529AV18, CY7C1524AV18, CY7C1522AV18 manual BWS0 BWS1 BWS2 BWS3

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CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Write Cycle Descriptions

The write cycle description table for CY7C1529AV18 follows. [2, 8]

BWS0

K

K

Comments

L

L–H

–

During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device.

L

–

L–H

During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device.

H

L–H

–

No data is written into the device during this portion of a write operation.

 

 

 

 

H

–

L–H

No data is written into the device during this portion of a write operation.

 

 

 

 

Write Cycle Descriptions

The write cycle description table for CY7C1524AV18 follows. [2, 8]

BWS0

BWS1

BWS2

BWS3

K

K

Comments

L

L

L

L

L–H

–

During the Data portion of a write sequence, all four bytes (D[35:0]) are written into

 

 

 

 

 

 

the device.

 

 

 

 

 

 

 

L

L

L

L

–

L–H

During the Data portion of a write sequence, all four bytes (D[35:0]) are written into

 

 

 

 

 

 

the device.

L

H

H

H

L–H

–

During the Data portion of a write sequence, only the lower byte (D[8:0]) is written

 

 

 

 

 

 

into the device. D[35:9] remains unaltered.

L

H

H

H

–

L–H

During the Data portion of a write sequence, only the lower byte (D[8:0]) is written

 

 

 

 

 

 

into the device. D[35:9] remains unaltered.

H

L

H

H

L–H

–

During the Data portion of a write sequence, only the byte (D[17:9]) is written into

 

 

 

 

 

 

the device. D[8:0] and D[35:18] remains unaltered.

H

L

H

H

–

L–H

During the Data portion of a write sequence, only the byte (D[17:9]) is written into

 

 

 

 

 

 

the device. D[8:0] and D[35:18] remains unaltered.

H

H

L

H

L–H

–

During the Data portion of a write sequence, only the byte (D[26:18]) is written into

 

 

 

 

 

 

the device. D[17:0] and D[35:27] remains unaltered.

H

H

L

H

–

L–H

During the Data portion of a write sequence, only the byte (D[26:18]) is written into

 

 

 

 

 

 

the device. D[17:0] and D[35:27] remains unaltered.

H

H

H

L

L–H

–

During the Data portion of a write sequence, only the byte (D[35:27]) is written into

 

 

 

 

 

 

the device. D[26:0] remains unaltered.

H

H

H

L

–

L–H

During the Data portion of a write sequence, only the byte (D[35:27]) is written into

 

 

 

 

 

 

the device. D[26:0] remains unaltered.

H

H

H

H

L–H

–

No data is written into the device during this portion of a write operation.

 

 

 

 

 

 

 

H

H

H

H

–

L–H

No data is written into the device during this portion of a write operation.

 

 

 

 

 

 

 

Document #: 001-06981 Rev. *D

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Contents Selection Guide FeaturesConfigurations Functional DescriptionCLK Logic Block Diagram CY7C1522AV18Doff Logic Block Diagram CY7C1524AV18 Logic Block Diagram CY7C1523AV18CY7C1529AV18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1522AV18 8M xCY7C1524AV18 2M x CY7C1523AV18 4M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Application Example Application ExampleBWS0/ BWS1 NWS0 NWS1 Truth TableWrite Cycle Descriptions LD R/WBWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TCK TAP Controller Block DiagramTAP Electrical Characteristics TDITAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitLOW Switching CharacteristicsHigh DLL Timing Static to DLL ResetBurst Switching WaveformsNOP Read Write Ordering Information 250 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramREV ECN no Submission ORIG. Description of Change Date Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions Document History

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
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