Cypress CY7C1524AV18 Identification Register Definitions, Scan Register Sizes, Instruction Codes

Page 17

CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Identification Register Definitions

Instruction Field

Value

CY7C1522AV18

CY7C1529AV18

CY7C1523AV18

CY7C1524AV18

Description

Revision Number

000

000

000

000

Version number.

(31:29)

 

 

 

 

 

 

 

 

 

 

 

Cypress Device ID

11010100010000100

11010100010001100

11010100010010100

11010100010100100

Defines the type of

(28:12)

 

 

 

 

SRAM.

Cypress JEDEC ID

00000110100

00000110100

00000110100

00000110100

Allows unique

(11:1)

 

 

 

 

identification of

 

 

 

 

 

SRAM vendor.

ID Register

1

1

1

1

Indicates the

Presence (0)

 

 

 

 

presence of an ID

 

 

 

 

 

register.

Scan Register Sizes

Register Name

Bit Size

Instruction

Bypass

ID

Boundary Scan

3

1

32

109

Instruction Codes

Instruction

Code

Description

EXTEST

000

Captures the input and output ring contents.

IDCODE

001

Loads the ID register with the vendor ID code and places the register between TDI and TDO.

 

 

This operation does not affect SRAM operation.

SAMPLE Z

010

Captures the input and output contents. Places the boundary scan register between TDI and

 

 

TDO. Forces all SRAM output drivers to a High-Z state.

RESERVED

011

Do Not Use: This instruction is reserved for future use.

 

 

 

SAMPLE/PRELOAD

100

Captures the input and output ring contents. Places the boundary scan register between TDI

 

 

and TDO. Does not affect the SRAM operation.

RESERVED

101

Do Not Use: This instruction is reserved for future use.

 

 

 

RESERVED

110

Do Not Use: This instruction is reserved for future use.

 

 

 

BYPASS

111

Places the bypass register between TDI and TDO. This operation does not affect SRAM

 

 

operation.

Document #: 001-06981 Rev. *D

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Contents Configurations FeaturesFunctional Description Selection GuideCLK Logic Block Diagram CY7C1522AV18Doff Logic Block Diagram CY7C1524AV18 Logic Block Diagram CY7C1523AV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1522AV18 8M x CY7C1529AV18 8M xCY7C1524AV18 2M x CY7C1523AV18 4M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Application ExampleWrite Cycle Descriptions Truth TableLD R/W BWS0/ BWS1 NWS0 NWS1BWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTDI TCKTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitLOW Switching CharacteristicsHigh DLL Timing Static to DLL ResetBurst Switching WaveformsNOP Read Write Ordering Information 250 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.