Cypress CY7C1529AV18, CY7C1524AV18, CY7C1522AV18, CY7C1523AV18 manual DLL Timing, Static to DLL Reset

Page 24

CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Switching Characteristics (continued)

Over the Operating Range [20, 21]

Cypress

Consortium

 

 

 

 

 

Description

300 MHz

278 MHz

250 MHz

200 MHz

167 MHz

Unit

Parameter

Parameter

 

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCO

tCHQV

C/C

Clock Rise (or K/K in single

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

 

 

 

 

clock mode) to Data Valid

 

 

 

 

 

 

 

 

 

 

 

tDOH

tCHQX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

Data Output Hold after Output C/C

 

 

 

 

 

Clock Rise (Active to Active)

 

 

 

 

 

 

 

 

 

 

 

tCCQO

tCHCQV

 

 

Clock Rise to Echo Clock Valid

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

C/C

tCQOH

tCHCQX

 

 

 

 

 

 

 

 

 

 

 

 

Clock

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

Echo Clock Hold after C/C

 

 

 

 

Rise

 

 

 

 

 

 

 

 

 

 

 

tCQD

tCQHQV

Echo Clock High to Data Valid

 

0.27

 

0.27

 

0.30

 

0.35

 

0.40

ns

tCQDOH

tCQHQX

Echo Clock High to Data Invalid

–0.27

–

–0.27

–

–0.30

–

–0.35

–

–0.40

–

ns

tCQH

tCQHCQL

 

 

 

 

 

 

 

 

 

HIGH [24]

1.24

–

1.35

–

1.55

–

1.95

–

2.45

–

ns

Output Clock (CQ/CQ)

tCQHCQH

 

tCQHCQH

 

CQ Clock Rise to

 

 

Clock Rise

1.24

–

1.35

–

1.55

–

1.95

–

2.45

–

ns

 

 

CQ

 

 

 

 

(rising edge to rising edge) [24]

 

 

 

 

 

 

 

 

 

 

 

tCHZ

tCHQZ

 

 

 

 

 

Rise to High-Z

–

0.45

–

0.45

–

0.45

–

0.45

–

0.50

ns

Clock (C/C)

 

 

 

 

(Active to High-Z) [25, 26]

 

 

 

 

 

 

 

 

 

 

 

tCLZ

tCHQX1

 

 

 

 

 

Rise to Low-Z [25, 26]

–0.45

–

–0.45

–

–0.45

–

–0.45

–

–0.50

–

ns

Clock (C/C)

DLL Timing

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKC Var

tKC Var

Clock Phase Jitter

–

0.20

–

0.20

–

0.20

–

0.20

–

0.20

ns

tKC lock

tKC lock

DLL Lock Time (K, C)

1024

–

1024

–

1024

–

1024

–

1024

–

Cycles

tKC Reset

tKC Reset

K Static to DLL Reset

30

 

30

 

30

 

30

 

30

 

ns

Notes

24.These parameters are extrapolated from the input timing parameters (tKHKH - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production

25.tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms. Transition is measured ± 100 mV from steady-state voltage.

26.At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.

Document #: 001-06981 Rev. *D

Page 24 of 30

[+] Feedback

Page 23 Page 25
Image 24
Page 23 Page 25
Contents Features ConfigurationsFunctional Description Selection GuideLogic Block Diagram CY7C1522AV18 DoffCLK Logic Block Diagram CY7C1523AV18 Logic Block Diagram CY7C1524AV18Pin Configuration Ball Fbga 15 x 17 x 1.4 mm PinoutCY7C1522AV18 8M x CY7C1529AV18 8M xCY7C1523AV18 4M x CY7C1524AV18 2M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Power Supply Inputs to the Core of the Device Power Supply Inputs for the Outputs of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Application ExampleTruth Table Write Cycle DescriptionsLD R/W BWS0/ BWS1 NWS0 NWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Controller Block Diagram TAP Electrical CharacteristicsTDI TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsIdentification Register Definitions Scan Register SizesInstruction Codes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Capacitance Thermal ResistanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics HighLOW Static to DLL Reset DLL TimingSwitching Waveforms NOP Read WriteBurst Ordering Information 250 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmSales, Solutions, and Legal Information Worldwide Sales and Design Support Products PSoC SolutionsDocument History REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
Top Page Image Contents