Cypress CY7C1524AV18, CY7C1529AV18, CY7C1522AV18, CY7C1523AV18 manual Application Example

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CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18

synchronized to the output clock of the DDR-II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 23.

DLL

These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the

DLL is locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock it to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in DDR-I mode (with one cycle latency and a longer access time). For information refer to the application note DLL Considerations in QDRII™/DDRII.

Application Example

Figure 1 shows four DDR-II SIO used in an application.

Figure 1. Application Example

 

DATA IN

 

DATA OUT

 

Address

 

LD#

 

R/W#

BUS

BWS#

 

MASTER

SRAM 1 Input CQ

(CPU

SRAM 1 Input CQ#

or

SRAM 4 Input CQ

SRAM 4 Input CQ#

ASIC)

 

 

Source K

 

Source K#

 

Delayed K

 

Delayed K#

 

 

 

SRAM 1

 

 

 

ZQ

 

 

SRAM 4

 

 

 

ZQ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

 

 

 

Q

R = 250Ohms

 

 

B

 

 

 

Q

Vt

 

 

 

 

 

 

CQ

 

 

 

 

 

CQ

 

 

 

W

 

 

 

 

 

 

W

 

 

 

 

D

LD R/W

B

 

 

 

CQ#

D

LD R/W

 

 

 

CQ#

 

S

 

 

 

S

 

 

 

R

A

LD R/W W

 

 

 

 

A

#

#

#

 

 

 

 

#

#

#

C

C#

K

K#

C

C#

K

K#

 

 

#

#

#

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vt

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

R

R = 50Ohms

Vt = VREF

 

 

 

 

 

 

 

 

 

 

 

 

R = 250Ohms

Document #: 001-06981 Rev. *D

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Contents Configurations FeaturesFunctional Description Selection GuideLogic Block Diagram CY7C1522AV18 DoffCLK Logic Block Diagram CY7C1524AV18 Logic Block Diagram CY7C1523AV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1522AV18 8M x CY7C1529AV18 8M xCY7C1524AV18 2M x CY7C1523AV18 4M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Application ExampleWrite Cycle Descriptions Truth TableLD R/W BWS0/ BWS1 NWS0 NWS1BWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTDI TCKTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitSwitching Characteristics HighLOW DLL Timing Static to DLL ResetSwitching Waveforms NOP Read WriteBurst Ordering Information 250 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
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