Cypress CY7C1523AV18, CY7C1529AV18, CY7C1524AV18, CY7C1522AV18 Switching Characteristics, High, Low

Page 23

CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Switching Characteristics

Over the Operating Range [20, 21]

Cypress Consortium Parameter Parameter

Description

300 MHz 278 MHz 250 MHz 200 MHz 167 MHz

Min Max Min Max Min Max Min Max Min Max

Unit

t

POWER

 

V (Typical) to the First Access [22]

1

 

1

 

1

 

1

 

1

 

ms

 

 

DD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tCYC

tKHKH

K Clock and C Clock Cycle Time

3.3

8.4

3.6

8.4

4.0

8.4

5.0

8.4

6.0

8.4

ns

tKH

tKHKL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.32

–

1.4

–

1.6

–

2.0

–

2.4

–

ns

Input Clock (K/K;

 

C/C) HIGH

tKL

tKLKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.32

–

1.4

–

1.6

–

2.0

–

2.4

–

ns

Input Clock (K/K;

 

C/C) LOW

tKHKH

tKHKH

K Clock Rise to

 

 

Clock Rise and C

1.49

–

1.6

–

1.8

–

2.2

–

2.7

–

ns

K

 

 

 

to C Rise (rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKHCH

tKHCH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

1.45

0

1.55

0

1.8

0

2.2

0

2.7

ns

K/K

Clock Rise to C/C Clock Rise

 

 

 

(rising edge to rising edge)

 

 

 

 

 

 

 

 

 

 

 

Setup Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSA

tAVKH

Address Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

tSC

tIVKH

Control Setup to K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

 

 

 

(LD, R/W)

 

 

 

 

 

 

 

 

 

 

 

tSCDDR

tIVKH

Double Data Rate Control Setup to

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

 

 

 

Clock (K/K) Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(BWS0, BWS1,

BWS

2,

BWS

3)

 

 

 

 

 

 

 

 

 

 

 

tSD [23]

tDVKH

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

Setup to Clock (K/K)

 

 

 

 

[X:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Hold Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tHA

tKHAX

Address Hold after K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

tHC

tKHIX

Control

Hold after K Clock Rise

0.4

–

0.4

–

0.5

–

0.6

–

0.7

–

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(LD, R/W)

 

 

 

 

 

 

 

 

 

 

 

tHCDDR

tKHIX

Double Data Rate Control Hold after

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

 

 

 

Clock (K/K) Rise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(BWS0, BWS1,

BWS

2,

BWS

3)

 

 

 

 

 

 

 

 

 

 

 

tHD

tKHDX

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise

0.3

–

0.3

–

0.35

–

0.4

–

0.5

–

ns

Hold after Clock (K/K)

 

 

 

[X:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes

21.When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range.

22.This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before a read or write operation can be initiated.

23.For D2 data signal on CY7C1529AV18 device, tSD is 0.5 ns for 200 MHz, 250 MHz, 278 MHz and 300 MHz frequencies.

Document #: 001-06981 Rev. *D

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Contents Selection Guide FeaturesConfigurations Functional DescriptionCLK Logic Block Diagram CY7C1522AV18Doff Logic Block Diagram CY7C1524AV18 Logic Block Diagram CY7C1523AV18CY7C1529AV18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1522AV18 8M xCY7C1524AV18 2M x CY7C1523AV18 4M xSynchronous Read/Write Input. When Pin DefinitionsPin Name Pin Description TDO for Jtag Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device Referenced with Respect toFunctional Overview Application Example Application ExampleBWS0/ BWS1 NWS0 NWS1 Truth TableWrite Cycle Descriptions LD R/WBWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TCK TAP Controller Block DiagramTAP Electrical Characteristics TDITAP Timing and Test Conditions TAP AC Switching CharacteristicsRegister Name Bit Size Identification Register DefinitionsScan Register Sizes Instruction CodesBit # Bump ID Boundary Scan OrderDLL Constraints Power Up Sequence in DDR-II SramPower Up Sequence Maximum Ratings Electrical CharacteristicsDC Electrical Characteristics AC Electrical Characteristics Parameter Description Test Conditions Fbga Unit CapacitanceThermal Resistance Parameter Description Test Conditions Max UnitLOW Switching CharacteristicsHigh DLL Timing Static to DLL ResetBurst Switching WaveformsNOP Read Write Ordering Information 250 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramREV ECN no Submission ORIG. Description of Change Date Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions Document History

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
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