Cypress CY7C1524AV18, CY7C1529AV18, CY7C1522AV18 manual Switching Waveforms, NOP Read Write, Burst

Page 25

CY7C1522AV18, CY7C1529AV18

CY7C1523AV18, CY7C1524AV18

Switching Waveforms

Figure 5. Read/Write/Deselect Sequence [27, 28, 29]

NOP

READ

READ

WRITE

WRITE

READ

NOP

 

 

(burst of 2)

(burst of 2)

(burst of 2)

(burst of 2)

(burst of 2)

 

 

1

2

3

4

5

6

7

8

K

K

LD

R/W

A

D

Q

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tKH

 

tKL

 

tCYC

tKHKH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSC

 

A0

 

A1

A2

 

A3

 

A4

 

 

t

SA

t

HA

 

tHD

 

 

tHD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tSD

 

 

tSD

 

 

 

 

 

 

 

 

D20

D21

D30

D31

 

 

 

 

 

Q00

Q01

Q10

Q11

 

Q40

Q41

 

 

 

t KHCH

tCLZ

tCQD

tDOH

 

 

 

 

 

 

 

 

 

 

 

tKHCH

 

 

 

tCO

tCQDOH

 

 

tCHZ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C#

CQ

CQ#

tCQOH

tCQOH

tCCQO

tKH

 

tKL

tCCQO

tCQH

tCYC

tCQHCQH

tKHKH

DON’T CARE

UNDEFINED

Notes

27.Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1.

28.Outputs are disabled (High-Z) one clock cycle after a NOP.

29.In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram.

Document #: 001-06981 Rev. *D

Page 25 of 30

[+] Feedback

Image 25
Contents Configurations FeaturesFunctional Description Selection GuideDoff Logic Block Diagram CY7C1522AV18CLK Logic Block Diagram CY7C1524AV18 Logic Block Diagram CY7C1523AV18Ball Fbga 15 x 17 x 1.4 mm Pinout Pin ConfigurationCY7C1522AV18 8M x CY7C1529AV18 8M xCY7C1524AV18 2M x CY7C1523AV18 4M xPin Name Pin Description Pin DefinitionsSynchronous Read/Write Input. When Power Supply Inputs for the Outputs of the Device Power Supply Inputs to the Core of the DeviceReferenced with Respect to TDO for JtagFunctional Overview Application Example Application ExampleWrite Cycle Descriptions Truth TableLD R/W BWS0/ BWS1 NWS0 NWS1BWS0 BWS1 BWS2 BWS3 BWS0Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TAP Electrical Characteristics TAP Controller Block DiagramTDI TCKTAP Timing and Test Conditions TAP AC Switching CharacteristicsScan Register Sizes Identification Register DefinitionsInstruction Codes Register Name Bit SizeBit # Bump ID Boundary Scan OrderPower Up Sequence Power Up Sequence in DDR-II SramDLL Constraints DC Electrical Characteristics Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Thermal Resistance CapacitanceParameter Description Test Conditions Max Unit Parameter Description Test Conditions Fbga UnitHigh Switching CharacteristicsLOW DLL Timing Static to DLL ResetNOP Read Write Switching WaveformsBurst Ordering Information 250 167 Ball Fbga 15 x 17 x 1.4 mm Package DiagramWorldwide Sales and Design Support Products PSoC Solutions Sales, Solutions, and Legal InformationDocument History REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.