Cypress CY7C1522AV18, CY7C1529AV18, CY7C1524AV18 manual Pin Definitions, Pin Name Pin Description

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CY7C1522AV18, CY7C1529AV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1523AV18, CY7C1524AV18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Definitions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin Name

IO

 

 

 

 

 

Pin Description

 

D[x:0]

Input-

Data Input Signals. Sampled on the rising edge of K and

 

clocks during valid write operations.

K

 

 

 

 

 

 

 

Synchronous

CY7C1522AV18 - D[7:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1529AV18 - D[8:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1523AV18 - D[17:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1524AV18 - D[35:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition

 

LD

 

 

 

 

 

 

 

Synchronous

includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period

 

 

 

 

 

 

 

 

of bus activity).

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0,

 

Nibble Write Select 0, 1 − Active LOW (CY7C1522AV18 Only). Sampled on the rising edge of the K

 

NWS

 

 

NWS1

 

and K clocks during Write operations. Used to select which nibble is written into the device during the

 

 

 

 

 

 

 

 

current portion of the Write operations.Nibbles not written remain unaltered.

 

 

 

 

 

 

 

 

NWS0 controls D[3:0] and NWS1 controls D[7:4].

 

 

 

 

 

 

 

 

All Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select

 

 

 

 

 

 

 

 

ignores the corresponding nibble of data and it is not written into the device.

 

 

 

 

 

0,

Input-

Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and

 

 

clocks during

 

BWS

K

 

BWS1,

Synchronous

write operations. Used to select which byte is written into the device during the current portion of the write

 

BWS2,

 

operations. Bytes not written remain unaltered.

 

BWS3

 

CY7C1529AV18 − BWS0

controls D[8:0]

 

 

 

 

 

 

 

 

CY7C1523AV18 − BWS0

controls D[8:0],

BWS

 

1 controls D[17:9]

.

 

 

 

 

 

 

 

 

 

 

 

CY7C1524AV18 − BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls

 

 

 

 

 

 

 

 

D[35:27].

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select

 

 

 

 

 

 

 

 

ignores the corresponding byte of data and it is not written into the device.

 

A

Input-

Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These

 

 

 

 

 

 

 

Synchronous

address inputs are multiplexed for both read and write operations. Internally, the device is organized as

 

 

 

 

 

 

 

 

8M x 8 (2 arrays each of 4M x 8) for CY7C1522AV18, 8M x 9 (2 arrays each of 4M x 9) for CY7C1529AV18,

 

 

 

 

 

 

 

 

4M x 18 (2 arrays each of 2M x 18) for CY7C1523AV18 and 2M x 36 (2 arrays each of 1M x 36) for

 

 

 

 

 

 

 

 

CY7C1524AV18. Therefore, only 22 address inputs are needed to access the entire memory array of

 

 

 

 

 

 

 

 

CY7C1522AV18 and CY7C1529AV18, 21 address inputs for CY7C1523AV18 and 20 address inputs for

 

 

 

 

 

 

 

 

CY7C1524AV18. These inputs are ignored when the appropriate port is deselected.

 

Q[x:0]

Outputs-

Data Output Signals. These pins drive out the requested data during a read operation. Valid data is

 

 

 

 

 

 

 

Synchronous

driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single

 

 

 

 

 

 

 

 

clock mode. When the read port is deselected, Q[x:0] are automatically tri-stated.

 

 

 

 

 

 

 

 

CY7C1522AV18 − Q[7:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1529AV18 − Q[8:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1523AV18 − Q[17:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CY7C1524AV18 − Q[35:0]

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input-

Synchronous Read/Write Input. When

 

is LOW, this input designates the access type (read when

 

R/W

LD

 

 

 

 

 

 

 

Synchronous

R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times

 

 

 

 

 

 

 

 

around the edge of K.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CInput Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for further details.

CInput Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 9 for further details.

K

Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device

 

and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising

 

edge of K.

KInput Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode.

Document #: 001-06981 Rev. *D

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Contents Functional Description FeaturesConfigurations Selection GuideLogic Block Diagram CY7C1522AV18 DoffCLK Logic Block Diagram CY7C1523AV18 Logic Block Diagram CY7C1524AV18CY7C1522AV18 8M x Pin ConfigurationBall Fbga 15 x 17 x 1.4 mm Pinout CY7C1529AV18 8M xCY7C1523AV18 4M x CY7C1524AV18 2M xPin Definitions Pin Name Pin DescriptionSynchronous Read/Write Input. When Referenced with Respect to Power Supply Inputs to the Core of the DevicePower Supply Inputs for the Outputs of the Device TDO for JtagFunctional Overview Application Example Application ExampleLD R/W Truth TableWrite Cycle Descriptions BWS0/ BWS1 NWS0 NWS1BWS0 BWS0 BWS1 BWS2 BWS3Ieee 1149.1 Serial Boundary Scan Jtag Idcode TAP Controller State Diagram TDI TAP Controller Block DiagramTAP Electrical Characteristics TCKTAP AC Switching Characteristics TAP Timing and Test ConditionsInstruction Codes Identification Register DefinitionsScan Register Sizes Register Name Bit SizeBoundary Scan Order Bit # Bump IDPower Up Sequence in DDR-II Sram Power Up SequenceDLL Constraints Electrical Characteristics DC Electrical CharacteristicsMaximum Ratings AC Electrical Characteristics Parameter Description Test Conditions Max Unit CapacitanceThermal Resistance Parameter Description Test Conditions Fbga UnitSwitching Characteristics HighLOW Static to DLL Reset DLL TimingSwitching Waveforms NOP Read WriteBurst Ordering Information 250 167 Package Diagram Ball Fbga 15 x 17 x 1.4 mmDocument History Sales, Solutions, and Legal InformationWorldwide Sales and Design Support Products PSoC Solutions REV ECN no Submission ORIG. Description of Change Date

CY7C1529AV18, CY7C1523AV18, CY7C1524AV18, CY7C1522AV18 specifications

Cypress Semiconductor has established itself as a prominent player in the memory solutions market, and its family of high-performance synchronous static random-access memory (SRAM) devices has garnered significant attention. Among these, the CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 stand out due to their advanced features and reliable performance.

The CY7C1522AV18 is a 2 Megabit SRAM device designed to deliver fast access times with a dual-port architecture. This memory solution supports a 3.0V to 3.6V power supply range. With a high-speed operation of up to 167 MHz, it is ideal for applications that require rapid data processing and retrieval. Its unique architecture allows simultaneous read and write operations, which enhances throughput and efficiency in data handling.

Conversely, the CY7C1524AV18 is a 4 Megabit SRAM that builds upon these capabilities, offering an even larger storage option while maintaining similar speed and voltage specifications. Both devices come with Cyclical Redundancy Check (CRC) for data integrity, ensuring reliability in mission-critical applications. Additionally, these SRAMs feature a simple asynchronous interface, making integration into existing systems remarkably straightforward.

The CY7C1523AV18 offers a balance of features with its 3 Megabit capacity. Similar to its counterparts, this device also presents dual-port capabilities, which facilitate quick data access without bottlenecks, proving advantageous in high-performance computing environments.

Lastly, the CY7C1529AV18 rounds out the family with its impressive 9 Megabit capacity, providing ample memory for more extensive applications. Its enhanced architecture makes it suitable for advanced embedded systems where speed and reliability are paramount.

All four devices leverage Cypress’s innovative Synchronous SRAM technology, which offers low latency and high bandwidth, making them suited for high-performance applications such as networking, telecommunications, and industrial control systems. The memory chips are built with robust features including low power consumption modes and wide operating temperature ranges, enhancing their versatility in various environments.

In conclusion, the CYPRESS CY7C1522AV18, CY7C1524AV18, CY7C1523AV18, and CY7C1529AV18 are exemplary SRAM solutions that combine speed, capacity, and reliability, catering to a broad spectrum of contemporary electronic systems. Whether for embedded applications or high-speed network devices, these memory solutions continue to be at the forefront of technology advancements.
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