Cypress CY62157EV30 Maximum Ratings, Operating Range, Electrical Characteristics, Capacitance

CY62157EV30 MoBL®

Maximum Ratings

Exceeding maximum ratings may shorten the battery life of the device. User guidelines are not tested.

Storage Temperature	–65°C to + 150°C
Ambient Temperature with
Power Applied	–55°C to + 125°C
Supply Voltage to Ground
Potential	–0.3V to 3.9V	(VCCmax + 0.3V)
DC Voltage Applied to Outputs
in High-Z State [6, 7]	–0.3V to 3.9V	(V	CCmax	+ 0.3V)

DC Input Voltage [6, 7]		–0.3V to 3.9V (V			+ 0.3V)
			CC max
Output Current into Outputs (LOW)					20 mA
Static Discharge Voltage				> 2001V
(MIL-STD-883, Method 3015)
Latch up Current				> 200 mA
Operating Range
Device	Range		Ambient	VCC		[8]
			Temperature
CY62157EV30LL	Ind’l/Auto-A		–40°C to +85°C	2.20V to
				3.60V

Electrical Characteristics

Over the Operating Range

Parameter	Description			Test Conditions			45 ns (Ind’l/Auto-A)			Unit
							Min	Typ [2]	Max
VOH	Output HIGH Voltage	IOH = –0.1 mA					2.0			V
			IOH = –1.0 mA, VCC > 2.70V				2.4			V
VOL	Output LOW Voltage	IOL = 0.1 mA							0.4	V
			IOL = 2.1mA, VCC > 2.70V						0.4	V
VIH	Input HIGH Voltage		VCC = 2.2V to 2.7V				1.8		VCC + 0.3	V
			VCC = 2.7V to 3.6V				2.2		VCC + 0.3	V
VIL	Input LOW Voltage		VCC = 2.2V to 2.7V				–0.3		0.6	V
			VCC = 2.7V to 3.6V				–0.3		0.8	V
IIX	Input Leakage Current	GND < VI < VCC					–1		+1	∝A
IOZ	Output Leakage Current	GND < VO < VCC, Output Disabled					–1		+1	∝A
ICC	VCC Operating Supply Current	f = fmax = 1/tRC			VCC = VCCmax			18	25	mA
			f = 1 MHz		IOUT = 0 mA			1.8	3
					CMOS levels
ISB1	Automatic CE Power Down			1 > VCC − 0.2V, CE2 < 0.2V				2	8	∝A
			CE
	Current — CMOS Inputs		VIN > VCC – 0.2V, VIN < 0.2V)
			f = fmax (Address and Data Only),
			f = 0 (OE, BHE, BLE and
						WE), VCC = 3.60V
ISB2 [9]	Automatic CE Power Down			1 > VCC – 0.2V or CE2 < 0.2V,				2	8	∝A
			CE
	Current — CMOS Inputs		VIN > VCC – 0.2V or VIN < 0.2V, f = 0, VCC = 3.60V

Capacitance [10]

Parameter	Description	Test Conditions	Max	Unit
CIN	Input Capacitance	TA = 25°C, f = 1 MHz,	10	pF
		VCC = VCC(typ)
COUT	Output Capacitance		10	pF

Notes

6.VIL(min) = –2.0V for pulse durations less than 20 ns.

7.VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.

8.Full device AC operation assumes a 100 ∝s ramp time from 0 to Vcc(min) and 200 ∝s wait time after VCC stabilization.

9.Only chip enables (CE1 and CE2), byte enables (BHE and BLE) and BYTE (48 TSOP I only) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

10.Tested initially and after any design or process changes that may affect these parameters.

Document #: 38-05445 Rev. *E Page 4 of 14

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