Cypress CY62157EV30 manual Document History, Document Number, REV ECN no

Page 14

CY62157EV30 MoBL®

Document History Page

 

Document Title: CY62157EV30 MoBL®, 8-Mbit (512K x 16) Static RAM

 

Document Number: 38-05445

 

 

 

 

 

 

 

 

 

REV.

ECN NO.

Issue Date

Orig. of

 

 

 

 

 

 

 

 

Change

Description of Change

 

 

 

 

 

**

202940

See ECN

AJU

New Data Sheet

 

 

 

 

 

 

 

*A

291272

See ECN

SYT

Converted from Advance Information to Preliminary

 

 

 

 

 

Removed 48-TSOP I Package and the associated footnote

 

 

 

 

 

Added footnote stating 44 TSOP II Package has only one

CE

on Page # 2

 

 

 

 

 

Changed VCC stabilization time in footnote #7 from 100 s to 200 s

 

 

 

 

 

Changed ICCDR from 4 to 4.5 A

 

 

 

 

 

Changed tOHA from 6 to 10 ns for both 35 and 45 ns Speed Bins

 

 

 

 

 

Changed tDOE from 15 to 18 ns for 35 ns Speed Bin

 

 

 

 

 

Changed tHZOE, tHZBE and tHZWE from 12 and 15 ns to 15 and 18 ns for 35

 

 

 

 

 

and 45 ns Speed Bins respectively

 

 

 

 

 

Changed tHZCE from 12 and 15 ns to 18 and 22 ns for 35 and 45 ns Speed

 

 

 

 

 

Bins respectively

 

 

 

 

 

Changed tSCE, tAW and tBW from 25 and 40 ns to 30 and 35 ns for 35 and 45 ns

 

 

 

 

 

Speed Bins respectively

 

 

 

 

 

Changed tSD from 15 and 20 ns to 18 and 22 ns for 35 and 45 ns Speed Bins

 

 

 

 

 

respectively

 

 

 

 

 

Added Lead-Free Package Information

 

*B

444306

See ECN

NXR

Converted from Preliminary to Final.

 

 

 

 

 

Changed ball E3 from DNU to NC

 

 

 

 

 

Removed redundant footnote on DNU.

 

 

 

 

 

Removed 35 ns speed bin

 

 

 

 

 

Removed “L” bin

 

 

 

 

 

Added 48 pin TSOP I package

 

 

 

 

 

Added Automotive product information.

 

 

 

 

 

Changed the ICC Typ value from 16 mA to 18 mA and ICC Max value from 28

 

 

 

 

 

mA to 25 mA for test condition f = fax = 1/tRC.

 

 

 

 

 

Changed the ICC Max value from 2.3 mA to 3 mA for test condition f = 1MHz.

 

 

 

 

 

Changed the ISB1 and ISB2 Max value from 4.5 A to 8 A and Typ value from

 

 

 

 

 

0.9 A to 2 A respectively.

 

 

 

 

 

Modified ISB1 test condition to include

BHE,

 

BLE

 

 

 

 

 

 

Updated Thermal Resistance table.

 

 

 

 

 

Changed Test Load Capacitance from 50 pF to 30 pF.

 

 

 

 

 

Added Typ value for ICCDR .

 

 

 

 

 

Changed the ICCDR Max value from 4.5 A to 5 A

 

 

 

 

 

Corrected tR in Data Retention Characteristics from 100 s to tRC ns.

 

 

 

 

 

Changed tLZOE from 3 to 5

 

 

 

 

 

Changed tLZCE from 6 to 10

 

 

 

 

 

Changed tHZCE from 22 to 18

 

 

 

 

 

Changed tLZBE from 6 to 5

 

 

 

 

 

Changed tPWE from 30 to 35

 

 

 

 

 

Changed tSD from 22 to 25

 

 

 

 

 

Changed tLZWE from 6 to 10

 

 

 

 

 

Added footnote #15

 

 

 

 

 

Updated the ordering Information and replaced the Package Name column

 

 

 

 

 

with Package Diagram.

 

*C

467052

See ECN

NXR

Modified Data sheet to include x8 configurability.

 

 

 

 

 

Updated the Ordering Information table

 

*D

925501

See ECN

VKN

Removed Automotive-E information

 

 

 

 

 

Added Preliminary Automotive-A information

 

 

 

 

 

Added footnote #10 related to ISB2 and ICCDR

 

 

 

 

 

Added footnote #15 related AC timing parameters

 

*E

1045801

See ECN

VKN

Converted Automotive-A specs from preliminary to final

 

 

 

 

 

Updated footnote #9

Document #: 38-05445 Rev. *E

 

 

 

 

 

 

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Contents Functional Description1 FeaturesLogic Block Diagram Cypress Semiconductor CorporationPin Configuration Product PortfolioFollowing picture shows the 48-ball Vfbga pinout.3, 4 Ball Vfbga Top ViewOperating Range Electrical CharacteristicsMaximum Ratings CapacitanceAC Test Loads and Waveforms Data Retention CharacteristicsThermal Resistance Data Retention Waveform12Switching Characteristics Write CycleSwitching Waveforms Read Cycle No Address Transition Controlled19Write Cycle No WE Controlled18, 22 Write Cycle No CE1 or CE2 Controlled18, 22Write Cycle No WE Controlled, OE LOW23 Write Cycle No BHE/BLE Controlled, OE LOW23Ordering Information Inputs/Outputs Mode PowerTruth Table BHE BLEPackage Diagrams Pin Vfbga 6 x 8 x 1 mmPin Tsop II Pin Tsop I 12 mm x 18.4 mm x 1.0 mm Document Number Issue Date Orig. Change Description of ChangeDocument History REV ECN no