Truth Table For Sram Operations | Cypress CY14B101NA, CY14B101LA

PRELIMINARY CY14B101LA, CY14B101NA

Truth Table For SRAM Operations

HSB must remain HIGH for SRAM operations.

Table 3. Truth Table for x8 Configuration

CE

WE

OE

Inputs/Outputs[2]

Mode

Power

H

X

X

High Z

Deselect/Power down

Standby

L

H

L

Data Out (DQ0–DQ7);

Read

Active

L

H

H

High Z

Output Disabled

Active

L

L

X

Data in (DQ0–DQ7);

Write

Active

Table 4. Truth Table for x16 Configuration

CE

WE

OE

BHE

BLE

Inputs/Outputs[2]

Mode

Power

H

X

X

X

X

High-Z

Deselect/Power down

Standby

L

X

X

H

H

High-Z

Output Disabled

Active

L

H

L

L

L

Data Out (DQ0–DQ15)

Read

Active

L

H

L

H

L

Data Out (DQ0–DQ7);

Read

Active

DQ8–DQ15in High-Z

L

H

L

L

H

Data Out (DQ8–DQ15);

Read

Active

DQ0–DQ7in High-Z

L

H

H

L

L

High-Z

Output Disabled

Active

L

H

H

H

L

High-Z

Output Disabled

Active

L

H

H

L

H

High-Z

Output Disabled

Active

L

L

X

L

L

Data In (DQ0–DQ15)

Write

Active

L

L

X

H

L

Data In (DQ0–DQ7);

Write

Active

DQ8–DQ15in High-Z

L

L

X

L

H

Data In (DQ8–DQ15);

Write

Active

DQ0–DQ7in High-Z

Document #: 001-42879 Rev. *B

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Cypress CY14B101NA, CY14B101LA Truth Table For Sram Operations, Truth Table for x8 Configuration Inputs/Outputs Mode Power

Contents

Cypress Semiconductor Corporation FeaturesLogic Block Diagram1, 2 Functional Description Pinouts Top ViewNot to scale Power Supply Inputs to the Device .0V +20%, -10% Output Enable, Active LOW. The active LOWByte High Enable, Active LOW. Controls DQ15 DQ8 Byte Low Enable, Active LOW. Controls DQ7 DQ0 AutoStore Operation Device OperationSram Read Sram Write Software Store Hardware Recall Power UpMode Selection A15 A09 Mode Power Noise Considerations Mode Selection A15 A09Preventing AutoStore Data Protection Range DC Electrical CharacteristicsMaximum Ratings Operating Range AC Test Conditions Data Retention and EnduranceCapacitance Thermal Resistance Sram Write Cycle AC Switching CharacteristicsSwitching Waveforms Parameters Sram Read Cycle Sram Read Cycle #2 CE and OE Controlled 3, 15 Sram Write Cycle #2 CE Controlled 3, 18, 19 Parameters Description 20 ns 25 ns 45 ns Unit Min Max AutoStore/Power Up Recall Description 20 ns 25 ns 45 ns Unit Min Max Software Controlled STORE/RECALL Cycle Hardware Store Pulse Width To Output Active Time when write latch not setHardware Store Cycle Description 20ns 25ns 45ns Unit Min Max Truth Table For Sram Operations Truth Table for x8 Configuration Inputs/Outputs Mode PowerTruth Table for x16 Configuration Inputs/Outputs Mode Power Ordering Information CY14B101LA-BA25XC CY14B101LA-ZS25XCTCY14B101LA-ZS25XC CY14B101LA-BA25XCT CY14B101LA-BA45XC CY14B101LA-ZS45XCTCY14B101LA-ZS45XC CY14B101LA-BA45XCT Nvsram Part Numbering NomenclatureCY 14 B 101L A-ZS 20 X C T ZS Tsop Pin Tsop II Package Diagrams Ball Fbga 6 mm x 10 mm x 1.2 mm Pin Ssop Pin Soic GVCH/PYRS Document HistoryUNC/PYRS GVCH/AESA USB Sales, Solutions, and Legal Information