Cypress CY14E102N AC Switching Characteristics, Parameters, 15 ns, 20 ns, 25 ns, 45 ns, Cypress

				ADVANCE				CY14E102L, CY14E102N
AC Switching Characteristics
The following table lists the AC switching characteristics.
	Parameters			Description	15 ns		20 ns		25 ns		45 ns		Unit
	Cypress	Alt			Min	Max	Min	Max	Min	Max	Min	Max
	Parameters	Parameters
SRAM Read Cycle
tACE		tACS	Chip Enable Access Time			15		20		25		45	ns
tRC[12]		tRC	Read Cycle Time		15		20		25		45		ns
t	[13]	t	Address Access Time			15		20		25		45	ns
	AA	AA
tDOE		tOE	Output Enable to Data Valid			10		10		12		20	ns
tOHA		tOH	Output Hold After Address		3		3		3		3		ns
			Change
tLZCE[14]		tLZ	Chip Enable to Output Active		3		3		3		3		ns
tHZCE[14]		tHZ	Chip Disable to Output Inactive			7		8		10		15	ns
tLZOE[14]		tOLZ	Output Enable to Output Active		0		0		0		0		ns
tHZOE[14]		tOHZ	Output Disable to Output			7		8		10		15	ns
			Inactive
tPU[11]		tPA	Chip Enable to Power Active		0		0		0		0		ns
tPD[11]		tPS	Chip Disable to Power Standby			15		20		25		45	ns
tDBE		-	Byte Enable to Data Valid			10		10		12		20	ns
tLZBE		-	Byte Enable to Output Active		0		0		0		0		ns
tHZBE		-	Byte Disable to Output Inactive			7		8		10		15	ns
SRAM Write Cycle
tWC		tWC	Write Cycle Time		15		20		25		45		ns
tPWE		tWP	Write Pulse Width		10		15		20		30		ns
tSCE		tCW	Chip Enable To End of Write		15		15		20		30		ns
tSD		tDW	Data Setup to End of Write		5		8		10		15		ns
tHD		tDH	Data Hold After End of Write		0		0		0		0		ns
tAW		tAW	Address Setup to End of Write		10		15		20		30		ns
tSA		tAS	Address Setup to Start of Write		0		0		0		0		ns
tHA		tWR	Address Hold After End of Write		0		0		0		0		ns
tHZWE[14,15]		tWZ	Write Enable to Output Disable			7		8		10		15	ns
tLZWE[14]		tOW	Output Active after End of Write		3		3		3		3		ns
tBW		-	Byte Enable to End of Write		15		15		20		30		ns

Notes

12.WE must be HIGH during SRAM read cycles.

13.Device is continuously selected with CE and OE both LOW.

14.Measured ±200 mV from steady state output voltage.

15.If WE is LOW when CE goes LOW, the output goes into high impedance state.

Document Number: 001-45755 Rev. *A Page 9 of 21

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