Intel MS-6112 manual Auto Configure EDO DRAM Timing, EDO DRAM Speed ns, EDO DRAM Read Burst Timing

CHAPTER 3 AMI® BIOS USER’S GUIDE

Description of the item on screen follows:

Auto Configure EDO DRAM Timing

Choose Enabled(default) will automatically configure the DRAM timing depending on the “DRAM Speed” selection. Choose disable to customize setup.

EDO DRAM Speed (ns)

This option specifies the RAS access time (in nanoseconds) for the DRAM used in the computer. The settings are 50,60 or 70. The Optimal default setting is 60 and the Fail-Safe default setting is 70.

EDO DRAM Read Burst Timing

Choose DRAM read burst timing for the customize setup.

B stand for BEDO DRAM, E stand for EDO DRAM and F stand for FAST PAGE DRAM.

EDO DRAM Write Burst Timing

Choose DRAM write burst timing for the customize setup.

EDO RAS Precharge Timing

This option defines the RAS# precharge requirements for the EDO memory type in 66MHz clocks.

EDO RAS to CAS Delay

This operation decide the delay in assertion of CAS#(SCAS#) from assertion of RAS#(SRAS#) in 66MHz.

MA Wait State

This option selects Fast or Slow MA bus timing. The Slow timing is equal to Fast+1, in term of clock number for EDO DRAM.

SDRAM RAS to CAS Delay

This operation decide the delay in assertion of CAS#(SCAS#) from assertion of RAS#(SRAS#) in 66MHz.

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