Cypress CY7C1356CV25, CY7C1354CV25 manual Boundary Scan Exit Order 256K ×, Bit # Ball ID

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CY7C1354CV25

CY7C1356CV25

Boundary Scan Exit Order (256K × 36)

Bit #

119-ball ID

165-ball ID

1

K4

B6

2

H4

B7

3

M4

A7

4

F4

B8

5

B4

A8

6

G4

A9

7

C3

B10

8

B3

A10

9

D6

C11

10

H7

E10

11

G6

F10

12

E6

G10

13

D7

D10

14

E7

D11

15

F6

E11

16

G7

F11

17

H6

G11

18

T7

H11

19

K7

J10

20

L6

K10

21

N6

L10

22

P7

M10

23

N7

J11

24

M6

K11

25

L7

L11

26

K6

M11

27

P6

N11

28

T4

R11

29

A3

R10

30

C5

P10

31

B5

R9

32

A5

P9

33

C6

R8

34

A6

P8

35

P4

R6

36

N4

P6

37

R6

R4

38

T5

P4

39

T3

R3

40

R2

P3

41

R3

R1

42

P2

N1

43

P1

L2

44

L2

K2

45

K1

J2

46

N2

M2

47

N1

M1

Boundary Scan Exit Order (256K × 36) (continued)

Bit #

119-ball ID

165-ball ID

48

M2

L1

49

L1

K1

50

K2

J1

51

Not Bonded

Not Bonded

 

(Preset to 1)

(Preset to 1)

52

H1

G2

53

G2

F2

54

E2

E2

55

D1

D2

56

H2

G1

57

G1

F1

58

F2

E1

59

E1

D1

60

D2

C1

61

C2

B2

62

A2

A2

63

E4

A3

64

B2

B3

65

L3

B4

66

G3

A4

67

G5

A5

68

L5

B5

69

B6

A6

Document #: 38-05537 Rev. *H

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Contents Functional Description1 FeaturesLogic Block Diagram-CY7C1354CV25 256K x Cypress Semiconductor CorporationSelection Guide Logic Block Diagram-CY7C1356CV25 512K xMaximum Access Time Maximum Operating Current 250 MHz 200 MHz 166 MHz UnitPin Configurations Pin Tqfp Pinout CY7C1354CV25 256K ×Pin Configurations Ball BGA Pinout CY7C1354CV25 256K ×Pin Configurations Ball Fbga Pinout Pin Definitions Single Write Accesses Single Read AccessesBurst Read Accesses Functional OverviewZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Function CY7C1354CV25 BW d BW c BW b BW a Sleep ModePartial Write Cycle Description2, 3, 4 Function CY7C1356CV25 BW b BW aIeee 1149.1 Serial Boundary Scan Jtag TAP Controller Block DiagramTAP Controller State Diagram10 Bypass Register TAP Instruction SetOutput Times TAP TimingParameter Description Min Max Unit Clock Set-up TimesIdentification Register Definitions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Scan Register SizesBoundary Scan Exit Order 256K × Bit # Ball IDJ10 Boundary Scan Exit Order 512K ×B10 K10Operating Range Electrical Characteristics Over the Operating Range14Maximum Ratings RangeAC Test Loads and Waveforms Capacitance16Thermal Resistance16 PackageSwitching Characteristics Over the Operating Range 18 250 200 166 Parameter Description Unit Min MaxADV/LD BWX Switching WaveformsRead/Write Timing23, 24 DON’T Care UndefinedCLK CEN ADV/LD BWX NOP, Stall and Deselect CYCLES23, 24ZZ Mode Timing27 DON’T CareOrdering Information CY7C1356CV25-166BZXI Document # 38-05537 Rev. *HCY7C1356CV25-200BZXI Document # 38-05537 Rev. *H CY7C1356CV25-250BZXI Document # 38-05537 Rev. *H Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm 90±0.05Ball Fbga 13 x 15 x 1.4 mm ECN No Issue Date Orig. Description of Change Document History

CY7C1356CV25, CY7C1354CV25 specifications

The Cypress CY7C1354CV25 and CY7C1356CV25 are high-performance, synchronous SRAM (Static Random Access Memory) devices designed for bandwidth-intensive applications. Both components are part of the Cypress family of low-power high-speed SRAMs, making them ideal for use in networking, telecommunications, and high-speed data processing systems.

One of the main features of the CY7C1354CV25 and CY7C1356CV25 is their wide data bus. The CY7C1354CV25 provides a 4 Megabit memory capacity with a 36-bit wide data interface, while the CY7C1356CV25 boosts this to 6 Megabits with a similarly wide data interface. This allows for high data throughput and efficiency in applications where quick access to large data sets is critical.

Both devices offer asynchronous write and synchronous read capabilities, enabling them to support pipelines and burst accesses effectively. The memory can be accessed in a single cycle, which considerably enhances performance in applications that require quick response times, such as high-speed packet processing in routers and switches.

The Cypress SRAMs are built using advanced CMOS technology, enabling low power consumption, which is essential for mobile and battery-operated devices. Their operating voltage range, typically between 2.7V and 3.6V, contributes to the low power profile while providing a high level of performance.

Moreover, both devices support a wide temperature range, making them suitable for industrial applications. They can operate in environments from -40°C to +125°C, ensuring reliability and performance under varying conditions. This makes the CY7C1354CV25 and CY7C1356CV25 particularly valuable for automotive and aerospace applications where temperature extremes can be encountered.

Cypress has enhanced the reliability of these SRAMs with features such as built-in error detection and correction capabilities. This ensures data integrity, which is crucial for mission-critical applications.

In summary, the Cypress CY7C1354CV25 and CY7C1356CV25 ensure tight integration of high capacity, speed, and reliability. With their advanced synchronous architecture, low power consumption, and broad temperature range, they represent an excellent choice for applications that demand high performance in challenging environments. These SRAM devices continue to meet the needs of modern electronic designs, making them a trusted solution in the industry.