Cypress CY7C1356CV25 manual TAP Timing, Parameter Description Min Max Unit Clock, Output Times

Page 12

CY7C1354CV25

CY7C1356CV25

TAP Timing

12

Test Clock

(TCK)tTH

tTMSS tTMSH

Test Mode Select (TMS)

tTDIS tTDIH

Test Data-In (TDI)

3

4

5

6

tTL tCYC

tTDOV

tTDOX

 

Test Data-Out

 

 

 

 

(TDO)

 

 

 

 

DON’T CARE

UNDEFINED

 

 

TAP AC Switching Characteristics Over the Operating Range[11, 12]

 

 

Parameter

Description

Min.

Max.

Unit

Clock

 

 

 

 

tTCYC

TCK Clock Cycle Time

50

 

ns

tTF

TCK Clock Frequency

 

20

MHz

tTH

TCK Clock HIGH Time

20

 

ns

tTL

TCK Clock LOW Time

20

 

ns

Output Times

 

 

 

tTDOV

TCK Clock LOW to TDO Valid

 

10

ns

tTDOX

TCK Clock LOW to TDO Invalid

0

 

ns

Set-up Times

 

 

 

tTMSS

TMS Set-up to TCK Clock Rise

5

 

ns

tTDIS

TDI Set-up to TCK Clock Rise

5

 

ns

tCS

Capture Set-up to TCK Rise

5

 

ns

Hold Times

 

 

 

 

tTMSH

TMS Hold after TCK Clock Rise

5

 

ns

tTDIH

TDI Hold after Clock Rise

5

 

ns

tCH

Capture Hold after Clock Rise

5

 

ns

Notes:

11.tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.

12.Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1 ns.

Document #: 38-05537 Rev. *H

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Contents Features Logic Block Diagram-CY7C1354CV25 256K xFunctional Description1 Cypress Semiconductor CorporationLogic Block Diagram-CY7C1356CV25 512K x Maximum Access Time Maximum Operating CurrentSelection Guide 250 MHz 200 MHz 166 MHz UnitPin Configurations Pin Tqfp Pinout CY7C1354CV25 256K ×Pin Configurations Ball BGA Pinout CY7C1354CV25 256K ×Pin Configurations Ball Fbga Pinout Pin Definitions Single Read Accesses Burst Read AccessesSingle Write Accesses Functional OverviewInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Sleep Mode Partial Write Cycle Description2, 3, 4Function CY7C1354CV25 BW d BW c BW b BW a Function CY7C1356CV25 BW b BW aTAP Controller Block Diagram TAP Controller State Diagram10Ieee 1149.1 Serial Boundary Scan Jtag Bypass Register TAP Instruction SetTAP Timing Parameter Description Min Max Unit ClockOutput Times Set-up Times5V TAP AC Test Conditions 5V TAP AC Output Load EquivalentIdentification Register Definitions Scan Register SizesBoundary Scan Exit Order 256K × Bit # Ball IDBoundary Scan Exit Order 512K × B10J10 K10Electrical Characteristics Over the Operating Range14 Maximum RatingsOperating Range RangeCapacitance16 Thermal Resistance16AC Test Loads and Waveforms PackageSwitching Characteristics Over the Operating Range 18 250 200 166 Parameter Description Unit Min MaxSwitching Waveforms Read/Write Timing23, 24ADV/LD BWX DON’T Care UndefinedCLK CEN ADV/LD BWX NOP, Stall and Deselect CYCLES23, 24ZZ Mode Timing27 DON’T CareOrdering Information CY7C1356CV25-166BZXI Document # 38-05537 Rev. *HCY7C1356CV25-200BZXI Document # 38-05537 Rev. *H CY7C1356CV25-250BZXI Document # 38-05537 Rev. *H Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm 90±0.05Ball Fbga 13 x 15 x 1.4 mm ECN No Issue Date Orig. Description of Change Document History

CY7C1356CV25, CY7C1354CV25 specifications

The Cypress CY7C1354CV25 and CY7C1356CV25 are high-performance, synchronous SRAM (Static Random Access Memory) devices designed for bandwidth-intensive applications. Both components are part of the Cypress family of low-power high-speed SRAMs, making them ideal for use in networking, telecommunications, and high-speed data processing systems.

One of the main features of the CY7C1354CV25 and CY7C1356CV25 is their wide data bus. The CY7C1354CV25 provides a 4 Megabit memory capacity with a 36-bit wide data interface, while the CY7C1356CV25 boosts this to 6 Megabits with a similarly wide data interface. This allows for high data throughput and efficiency in applications where quick access to large data sets is critical.

Both devices offer asynchronous write and synchronous read capabilities, enabling them to support pipelines and burst accesses effectively. The memory can be accessed in a single cycle, which considerably enhances performance in applications that require quick response times, such as high-speed packet processing in routers and switches.

The Cypress SRAMs are built using advanced CMOS technology, enabling low power consumption, which is essential for mobile and battery-operated devices. Their operating voltage range, typically between 2.7V and 3.6V, contributes to the low power profile while providing a high level of performance.

Moreover, both devices support a wide temperature range, making them suitable for industrial applications. They can operate in environments from -40°C to +125°C, ensuring reliability and performance under varying conditions. This makes the CY7C1354CV25 and CY7C1356CV25 particularly valuable for automotive and aerospace applications where temperature extremes can be encountered.

Cypress has enhanced the reliability of these SRAMs with features such as built-in error detection and correction capabilities. This ensures data integrity, which is crucial for mission-critical applications.

In summary, the Cypress CY7C1354CV25 and CY7C1356CV25 ensure tight integration of high capacity, speed, and reliability. With their advanced synchronous architecture, low power consumption, and broad temperature range, they represent an excellent choice for applications that demand high performance in challenging environments. These SRAM devices continue to meet the needs of modern electronic designs, making them a trusted solution in the industry.
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