Cypress Logic Block Diagram-CY7C1356CV25 512K x, Selection Guide, MHz 200 MHz 166 MHz Unit

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CY7C1354CV25

CY7C1356CV25

Logic Block Diagram–CY7C1356CV25 (512K x 18)

 

A0, A1, A

ADDRESS

 

 

 

 

 

 

 

 

 

 

REGISTER 0

A1

D1

Q1 A1'

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MODE

 

 

A0

D0 BURST Q0 A0'

 

 

 

 

 

 

 

 

ADV/LD

 

LOGIC

 

 

 

 

 

CLK

C

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

CEN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WRITE ADDRESS

 

WRITE ADDRESS

 

 

 

 

 

 

 

 

REGISTER 1

 

REGISTER 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

O

 

O

 

 

 

 

 

 

 

 

 

U

 

U

 

 

 

 

 

 

 

 

 

T

 

T

 

ADV/LD

 

 

 

 

 

 

S

P

D

P

 

 

 

 

 

 

 

E

U

A

U

 

 

 

 

WRITE REGISTRY

 

 

 

N

T

T

T

 

 

 

 

 

 

MEMORY

S

R

A

B

 

BWa

 

 

AND DATA COHERENCY

 

WRITE

E

 

 

 

 

 

ARRAY

 

E

S

U

 

 

 

 

CONTROL LOGIC

 

DRIVERS

A

G

 

 

 

 

 

 

T

F

 

BWb

 

 

 

 

 

 

M

I

E

F

 

 

 

 

 

 

 

 

P

S

E

E

 

 

 

 

 

 

 

 

S

T

R

R

 

 

 

 

 

 

 

 

 

E

I

S

 

WE

 

 

 

 

 

 

 

R

N

 

 

 

 

 

 

 

 

 

S

 

 

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

E

 

E

 

 

 

 

 

 

 

INPUT

E

 

INPUT

E

 

 

 

 

 

 

 

REGISTER 1

 

REGISTER 0

 

OE

 

READ LOGIC

 

 

 

 

 

 

 

 

CE1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE2

 

 

 

 

 

 

 

 

 

 

 

CE3

 

 

 

 

 

 

 

 

 

 

 

ZZ

 

Sleep

 

 

 

 

 

 

 

 

 

 

Control

 

 

 

 

 

 

 

DQs DQPa DQPb

Selection Guide

 

250 MHz

200 MHz

166 MHz

Unit

Maximum Access Time

2.8

3.2

3.5

ns

 

 

 

 

 

Maximum Operating Current

250

220

180

mA

 

 

 

 

 

Maximum CMOS Standby Current

40

40

40

mA

 

 

 

 

 

Document #: 38-05537 Rev. *H

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Contents Functional Description1 FeaturesLogic Block Diagram-CY7C1354CV25 256K x Cypress Semiconductor CorporationSelection Guide Logic Block Diagram-CY7C1356CV25 512K xMaximum Access Time Maximum Operating Current 250 MHz 200 MHz 166 MHz UnitPin Configurations Pin Tqfp Pinout CY7C1354CV25 256K ×Pin Configurations Ball BGA Pinout CY7C1354CV25 256K ×Pin Configurations Ball Fbga Pinout Pin Definitions Single Write Accesses Single Read AccessesBurst Read Accesses Functional OverviewZZ Mode Electrical Characteristics Interleaved Burst Address Table Mode = Floating or VDDLinear Burst Address Table Mode = GND Function CY7C1354CV25 BW d BW c BW b BW a Sleep ModePartial Write Cycle Description2, 3, 4 Function CY7C1356CV25 BW b BW aIeee 1149.1 Serial Boundary Scan Jtag TAP Controller Block DiagramTAP Controller State Diagram10 Bypass Register TAP Instruction SetOutput Times TAP TimingParameter Description Min Max Unit Clock Set-up TimesIdentification Register Definitions 5V TAP AC Test Conditions5V TAP AC Output Load Equivalent Scan Register SizesBoundary Scan Exit Order 256K × Bit # Ball IDJ10 Boundary Scan Exit Order 512K ×B10 K10Operating Range Electrical Characteristics Over the Operating Range14Maximum Ratings RangeAC Test Loads and Waveforms Capacitance16Thermal Resistance16 PackageSwitching Characteristics Over the Operating Range 18 250 200 166 Parameter Description Unit Min MaxADV/LD BWX Switching WaveformsRead/Write Timing23, 24 DON’T Care UndefinedCLK CEN ADV/LD BWX NOP, Stall and Deselect CYCLES23, 24ZZ Mode Timing27 DON’T CareOrdering Information CY7C1356CV25-166BZXI Document # 38-05537 Rev. *HCY7C1356CV25-200BZXI Document # 38-05537 Rev. *H CY7C1356CV25-250BZXI Document # 38-05537 Rev. *H Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm 90±0.05Ball Fbga 13 x 15 x 1.4 mm ECN No Issue Date Orig. Description of Change Document History

CY7C1356CV25, CY7C1354CV25 specifications

The Cypress CY7C1354CV25 and CY7C1356CV25 are high-performance, synchronous SRAM (Static Random Access Memory) devices designed for bandwidth-intensive applications. Both components are part of the Cypress family of low-power high-speed SRAMs, making them ideal for use in networking, telecommunications, and high-speed data processing systems.

One of the main features of the CY7C1354CV25 and CY7C1356CV25 is their wide data bus. The CY7C1354CV25 provides a 4 Megabit memory capacity with a 36-bit wide data interface, while the CY7C1356CV25 boosts this to 6 Megabits with a similarly wide data interface. This allows for high data throughput and efficiency in applications where quick access to large data sets is critical.

Both devices offer asynchronous write and synchronous read capabilities, enabling them to support pipelines and burst accesses effectively. The memory can be accessed in a single cycle, which considerably enhances performance in applications that require quick response times, such as high-speed packet processing in routers and switches.

The Cypress SRAMs are built using advanced CMOS technology, enabling low power consumption, which is essential for mobile and battery-operated devices. Their operating voltage range, typically between 2.7V and 3.6V, contributes to the low power profile while providing a high level of performance.

Moreover, both devices support a wide temperature range, making them suitable for industrial applications. They can operate in environments from -40°C to +125°C, ensuring reliability and performance under varying conditions. This makes the CY7C1354CV25 and CY7C1356CV25 particularly valuable for automotive and aerospace applications where temperature extremes can be encountered.

Cypress has enhanced the reliability of these SRAMs with features such as built-in error detection and correction capabilities. This ensures data integrity, which is crucial for mission-critical applications.

In summary, the Cypress CY7C1354CV25 and CY7C1356CV25 ensure tight integration of high capacity, speed, and reliability. With their advanced synchronous architecture, low power consumption, and broad temperature range, they represent an excellent choice for applications that demand high performance in challenging environments. These SRAM devices continue to meet the needs of modern electronic designs, making them a trusted solution in the industry.
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