Cypress CY7C1354CV25 manual CY7C1356CV25-250BZXI Document # 38-05537 Rev. *H

Page 24

CY7C1354CV25

CY7C1356CV25

Ordering Information (continued)

Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or

visit www.cypress.com for actual products offered.

250

CY7C1354CV25-250AXC

51-85050

100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

Commercial

 

 

 

 

 

 

CY7C1356CV25-250AXC

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BGC

51-85115

119-ball Ball Grid Array (14 x 22 x 2.4 mm)

 

 

 

 

 

 

 

CY7C1356CV25-250BGC

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BGXC

51-85115

119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free

 

 

 

 

 

 

 

CY7C1356CV25-250BGXC

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BZC

51-85180

165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)

 

 

 

 

 

 

 

CY7C1356CV25-250BZC

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BZXC

51-85180

165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free

 

 

 

 

 

 

 

CY7C1356CV25-250BZXC

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250AXI

51-85050

100-pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free

Industrial

 

 

 

 

 

 

CY7C1356CV25-250AXI

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BGI

51-85115

119-ball Ball Grid Array (14 x 22 x 2.4 mm)

 

 

 

 

 

 

 

CY7C1356CV25-250BGI

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BGXI

51-85115

119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free

 

 

 

 

 

 

 

CY7C1356CV25-250BGXI

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BZI

51-85180

165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm)

 

 

 

 

 

 

 

CY7C1356CV25-250BZI

 

 

 

 

 

 

 

 

 

CY7C1354CV25-250BZXI

51-85180

165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.4 mm) Lead-Free

 

 

 

 

 

 

 

CY7C1356CV25-250BZXI

 

 

 

 

 

 

 

 

Document #: 38-05537 Rev. *H

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Contents Features Logic Block Diagram-CY7C1354CV25 256K xFunctional Description1 Cypress Semiconductor CorporationLogic Block Diagram-CY7C1356CV25 512K x Maximum Access Time Maximum Operating CurrentSelection Guide 250 MHz 200 MHz 166 MHz UnitPin Configurations Pin Tqfp Pinout CY7C1354CV25 256K ×Pin Configurations Ball BGA Pinout CY7C1354CV25 256K ×Pin Configurations Ball Fbga Pinout Pin Definitions Single Read Accesses Burst Read AccessesSingle Write Accesses Functional OverviewInterleaved Burst Address Table Mode = Floating or VDD Linear Burst Address Table Mode = GNDZZ Mode Electrical Characteristics Sleep Mode Partial Write Cycle Description2, 3, 4Function CY7C1354CV25 BW d BW c BW b BW a Function CY7C1356CV25 BW b BW aTAP Controller Block Diagram TAP Controller State Diagram10Ieee 1149.1 Serial Boundary Scan Jtag Bypass Register TAP Instruction SetTAP Timing Parameter Description Min Max Unit ClockOutput Times Set-up Times5V TAP AC Test Conditions 5V TAP AC Output Load EquivalentIdentification Register Definitions Scan Register SizesBoundary Scan Exit Order 256K × Bit # Ball IDBoundary Scan Exit Order 512K × B10J10 K10Electrical Characteristics Over the Operating Range14 Maximum RatingsOperating Range RangeCapacitance16 Thermal Resistance16AC Test Loads and Waveforms PackageSwitching Characteristics Over the Operating Range 18 250 200 166 Parameter Description Unit Min MaxSwitching Waveforms Read/Write Timing23, 24ADV/LD BWX DON’T Care UndefinedCLK CEN ADV/LD BWX NOP, Stall and Deselect CYCLES23, 24ZZ Mode Timing27 DON’T CareOrdering Information CY7C1356CV25-166BZXI Document # 38-05537 Rev. *HCY7C1356CV25-200BZXI Document # 38-05537 Rev. *H CY7C1356CV25-250BZXI Document # 38-05537 Rev. *H Package Diagrams Pin Thin Plastic Quad Flatpack 14 x 20 x 1.4 mmBall BGA 14 x 22 x 2.4 mm 90±0.05Ball Fbga 13 x 15 x 1.4 mm ECN No Issue Date Orig. Description of Change Document History

CY7C1356CV25, CY7C1354CV25 specifications

The Cypress CY7C1354CV25 and CY7C1356CV25 are high-performance, synchronous SRAM (Static Random Access Memory) devices designed for bandwidth-intensive applications. Both components are part of the Cypress family of low-power high-speed SRAMs, making them ideal for use in networking, telecommunications, and high-speed data processing systems.

One of the main features of the CY7C1354CV25 and CY7C1356CV25 is their wide data bus. The CY7C1354CV25 provides a 4 Megabit memory capacity with a 36-bit wide data interface, while the CY7C1356CV25 boosts this to 6 Megabits with a similarly wide data interface. This allows for high data throughput and efficiency in applications where quick access to large data sets is critical.

Both devices offer asynchronous write and synchronous read capabilities, enabling them to support pipelines and burst accesses effectively. The memory can be accessed in a single cycle, which considerably enhances performance in applications that require quick response times, such as high-speed packet processing in routers and switches.

The Cypress SRAMs are built using advanced CMOS technology, enabling low power consumption, which is essential for mobile and battery-operated devices. Their operating voltage range, typically between 2.7V and 3.6V, contributes to the low power profile while providing a high level of performance.

Moreover, both devices support a wide temperature range, making them suitable for industrial applications. They can operate in environments from -40°C to +125°C, ensuring reliability and performance under varying conditions. This makes the CY7C1354CV25 and CY7C1356CV25 particularly valuable for automotive and aerospace applications where temperature extremes can be encountered.

Cypress has enhanced the reliability of these SRAMs with features such as built-in error detection and correction capabilities. This ensures data integrity, which is crucial for mission-critical applications.

In summary, the Cypress CY7C1354CV25 and CY7C1356CV25 ensure tight integration of high capacity, speed, and reliability. With their advanced synchronous architecture, low power consumption, and broad temperature range, they represent an excellent choice for applications that demand high performance in challenging environments. These SRAM devices continue to meet the needs of modern electronic designs, making them a trusted solution in the industry.