Cypress CY7C1471V33 Switching Characteristics, Description 133 MHz 117 MHz Unit Parameter Min Max

CY7C1471V33

CY7C1473V33

CY7C1475V33

Switching Characteristics

Over the Operating Range. Unless otherwise noted in the following table, timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. Test conditions shown in (a) of “AC Test Loads and Waveforms” on page 22 unless otherwise noted.

						Description	133 MHz		117 MHz		Unit
Parameter							Min	Max	Min	Max
tPOWER [16]							1		1		ms
Clock
tCYC	Clock Cycle Time						7.5		10		ns
tCH	Clock HIGH						2.5		3.0		ns
tCL	Clock LOW						2.5		3.0		ns
Output Times
tCDV	Data Output Valid After CLK Rise							6.5		8.5	ns
tDOH	Data Output Hold After CLK Rise						2.5		2.5		ns
t	Clock to Low-Z [17, 18, 19]						3.0		3.0		ns
CLZ
t	Clock to High-Z [17, 18, 19]							3.8		4.5	ns
CHZ
tOEV		LOW to Output Valid						3.0		3.8	ns
	OE
t		LOW to Output Low-Z [17, 18, 19]					0		0		ns
	OE
OELZ
t		HIGH to Output High-Z [17, 18, 19]						3.0		4.0	ns
	OE
OEHZ
Setup Times
tAS	Address Setup Before CLK Rise						1.5		1.5		ns
tALS
	ADV/LD					Setup Before CLK Rise	1.5		1.5		ns
tWES						X Setup Before CLK Rise	1.5		1.5		ns
	WE,			BW
tCENS			Setup Before CLK Rise				1.5		1.5		ns
	CEN
tDS	Data Input Setup Before CLK Rise						1.5		1.5		ns
tCES	Chip Enable Setup Before CLK Rise						1.5		1.5		ns
Hold Times
tAH	Address Hold After CLK Rise						0.5		0.5		ns
tALH
	ADV/LD				Hold After CLK Rise		0.5		0.5		ns
tWEH						X Hold After CLK Rise	0.5		0.5		ns
	WE,			BW
tCENH			Hold After CLK Rise				0.5		0.5		ns
	CEN
tDH	Data Input Hold After CLK Rise						0.5		0.5		ns
tCEH	Chip Enable Hold After CLK Rise						0.5		0.5		ns

Notes

16.This part has an internal voltage regulator; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a read or write operation can be initiated.

17.tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of“AC Test Loads and Waveforms” on page 22. Transition is measured ±200 mV from steady-state voltage.

18.At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z before Low-Z under the same system conditions.

19.This parameter is sampled and not 100% tested.

Document #: 38-05288 Rev. *J Page 23 of 32

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