CY7C1410JV18, CY7C1425JV18 CY7C1412JV18, CY7C1414JV18
Functional Overview
The CY7C1410JV18, CY7C1425JV18, CY7C1412JV18, and CY7C1414JV18 are synchronous pipelined Burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the
This device operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then the device behaves in
Accesses for both ports are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C and C, or K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C and C, or K and K when in single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K).
CY7C1412JV18 is described in the following sections. The same basic descriptions apply to CY7C1410JV18, CY7C1425JV18, and CY7C1414JV18.
Read Operations
The CY7C1412JV18 is organized internally as two arrays of 1M x 18. Accesses are completed in a burst of two sequential
Synchronous internal circuitry automatically
Write Operations
Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the same K clock rise, the data presented to D[17:0] is latched and stored into the lower
Byte Write Operations
Byte write operations are supported by the CY7C1412JV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each
Single Clock Mode
The CY7C1412JV18 can be used with a single clock that controls both the input and output registers. In this mode, the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power on. This function is a strap option and not alterable during device operation.
Concurrent Transactions
The read and write ports on the CY7C1412JV18 operate independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. The user can start reads and writes in the same clock cycle. If the ports access the same location at the same time, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise.
Depth Expansion
The CY7C1412JV18 has a port select input for each port. This enables for easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed prior to the device being deselected.
Document #: | Page 8 of 26 |
[+] Feedback