Cypress CY14B104L, CY14B104N manual Data Retention and Endurance, Capacitance, Thermal Resistance

Page 8

CY14B104L, CY14B104N

Data Retention and Endurance

Parameter

Description

Min

Unit

DATAR

Data Retention

20

Years

NVC

Nonvolatile STORE Operations

200

K

Capacitance

In the following table, the capacitance parameters are listed.[13]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

7

pF

 

 

VCC = 0 to 3.0V

 

 

COUT

Output Capacitance

7

pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed. [13]

Parameter

Description

Test Conditions

48-FBGA

44-TSOP II

54-TSOP II

Unit

ΘJA

Thermal Resistance

Test conditions follow standard test methods

28.82

31.11

30.73

°C/W

 

(Junction to Ambient)

and procedures for measuring thermal

 

 

 

 

 

 

impedance, in accordance with EIA/JESD51.

 

 

 

 

ΘJC

Thermal Resistance

7.84

5.56

6.08

°C/W

 

(Junction to Case)

 

 

 

 

 

 

 

Figure 5. AC Test Loads

 

 

 

 

3.0V

577Ω

R1

 

OUTPUT

 

30 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

789Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

577Ω

for tri-state specs

3.0V

R1

OUTPUT

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

789Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Test Conditions

Input Pulse Levels

0V to 3V

Input Rise and Fall Times (10% - 90%)

<3 ns

Input and Output Timing Reference Levels

1.5V

Note

13. These parameters are guaranteed but not tested.

Document #: 001-07102 Rev. *L

Page 8 of 25

[+] Feedback

Image 8
Contents Features Logic Block Diagram1, 2Functional Description Cypress Semiconductor CorporationPinouts Top ViewNot to scale TsopPin Definitions Device Operation Sram ReadSram Write AutoStore OperationHardware Recall Power Up Mode SelectionA15 A07 Mode Power Software StoreMode Selection A15 A07 Power Preventing AutoStoreData Protection Noise ConsiderationsDC Electrical Characteristics Maximum RatingsOperating Range RangeData Retention and Endurance CapacitanceThermal Resistance AC Test ConditionsAC Switching Characteristics Switching WaveformsMin Max Sram Read CycleCY14B104L, CY14B104N Sram Write Cycle #2 CE Controlled 3, 17, 18 HSB AutoStore/Power Up RecallParameters Description CY14B104L/CY14B104N Unit Min Max Software Controlled STORE/RECALL Cycle Parameters Description 20 ns 25 ns 45 ns Unit Min MaxHardware Store LOW to Store Busy 500 Hardware Store CycleHardware Store Pulse Width High Z Inputs/Outputs2 Mode PowerTruth Table For Sram Operations Ordering Information CY14B104L-ZS45XCT CY14B104L-ZS45XITCY14B104L-BA45XCT CY14B104L-BA45XITPart Numbering Nomenclature CY 14 B 104 L ZS P 20 X C TZS Tsop NvsramPackage Diagrams Pin Tsop IIBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Document History TUPPCI UHAGVCH/PYRS Aesa GVCH/DSGSales, Solutions, and Legal Information USB