Cypress CY14B104L, CY14B104N manual Preventing AutoStore, Data Protection, Noise Considerations

Page 6

CY14B104L, CY14B104N

Table 1. Mode Selection (continued)

 

 

 

 

 

 

 

 

 

 

 

 

[3]

A15 - A0[7]

Mode

IO

Power

 

CE

 

 

WE

OE,

BHE,

BLE

 

L

 

 

H

 

 

 

 

L

0x4E38

Read SRAM

Output Data

Active[8, 9]

 

 

 

 

 

 

 

 

 

 

 

 

 

0xB1C7

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x83E0

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x7C1F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x703F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x4B46

AutoStore Enable

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

 

 

L

0x4E38

Read SRAM

Output Data

Active ICC2[8, 9]

 

 

 

 

 

 

 

 

 

 

 

 

 

0xB1C7

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x83E0

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x7C1F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x703F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x8FC0

Nonvolatile Store

Output High Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

 

 

H

 

 

 

 

L

0x4E38

Read SRAM

Output Data

Active[8, 9]

 

 

 

 

 

 

 

 

 

 

 

 

 

0xB1C7

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x83E0

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x7C1F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x703F

Read SRAM

Output Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0x4C63

Nonvolatile

Output High Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Recall

 

 

Preventing AutoStore

The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE controlled read operations must be performed:

1.Read address 0x4E38 Valid READ

2.Read address 0xB1C7 Valid READ

3.Read address 0x83E0 Valid READ

4.Read address 0x7C1F Valid READ

5.Read address 0x703F Valid READ

6.Read address 0x8B45 AutoStore Disable

The AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE controlled read operations must be performed:

1.Read address 0x4E38 Valid READ

2.Read address 0xB1C7 Valid READ

3.Read address 0x83E0 Valid READ

4.Read address 0x7C1F Valid READ

5.Read address 0x703F Valid READ

6.Read address 0x4B46 AutoStore Enable

If the AutoStore function is disabled or re-enabled, a manual STORE operation (hardware or software) must be issued to save the AutoStore state through subsequent power down cycles. The part comes from the factory with AutoStore enabled.

Data Protection

The CY14B104L/CY14B104N protects data from corruption during low voltage conditions by inhibiting all externally initiated STORE and write operations. The low voltage condition is detected when VCC < VSWITCH. If the CY14B104L/CY14B104N is in a write mode (both CE and WE are LOW) at power up, after a RECALL or STORE, the write is inhibited until the SRAM is enabled after tLZHSB (HSB to output active). This protects against inadvertent writes during power up or brown out conditions.

Noise Considerations

Refer to CY application note AN1064.

Document #: 001-07102 Rev. *L

Page 6 of 25

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Contents Functional Description FeaturesLogic Block Diagram1, 2 Cypress Semiconductor CorporationNot to scale PinoutsTop View TsopPin Definitions Sram Write Device OperationSram Read AutoStore OperationA15 A07 Mode Power Hardware Recall Power UpMode Selection Software StoreData Protection Mode Selection A15 A07 PowerPreventing AutoStore Noise ConsiderationsOperating Range DC Electrical CharacteristicsMaximum Ratings RangeThermal Resistance Data Retention and EnduranceCapacitance AC Test ConditionsMin Max AC Switching CharacteristicsSwitching Waveforms Sram Read CycleCY14B104L, CY14B104N Sram Write Cycle #2 CE Controlled 3, 17, 18 AutoStore/Power Up Recall Parameters Description CY14B104L/CY14B104N Unit Min MaxHSB Software Controlled STORE/RECALL Cycle Parameters Description 20 ns 25 ns 45 ns Unit Min MaxHardware Store Cycle Hardware Store Pulse WidthHardware Store LOW to Store Busy 500 Inputs/Outputs2 Mode Power Truth Table For Sram OperationsHigh Z Ordering Information CY14B104L-BA45XCT CY14B104L-ZS45XCTCY14B104L-ZS45XIT CY14B104L-BA45XITZS Tsop Part Numbering NomenclatureCY 14 B 104 L ZS P 20 X C T NvsramPackage Diagrams Pin Tsop IIBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 PCI Document HistoryTUP UHAGVCH/PYRS Aesa GVCH/DSGSales, Solutions, and Legal Information USB