Cypress CY14B104NA, CY14B104LA manual Data Retention and Endurance, Capacitance, Thermal Resistance

Page 9

PRELIMINARY

CY14B104LA, CY14B104NA

Data Retention and Endurance

Parameter

Description

Min

Unit

DATAR

Data Retention

20

Years

NVC

Nonvolatile STORE Operation

200

K

Capacitance

In the following table, the capacitance parameters are listed.[12]

Parameter

Description

Test Conditions

Max

Unit

CIN

Input Capacitance

TA = 25°C, f = 1 MHz,

7

pF

 

 

VCC = 0 to 3.0V

 

 

COUT

Output Capacitance

7

pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed. [12]

Parameter

Description

Test Conditions

48-FBGA

44-TSOP II

54-TSOP II

Unit

ΘJA

Thermal Resistance

Test conditions follow standard test methods

28.82

31.11

30.73

°C/W

 

(Junction to Ambient)

and procedures for measuring thermal

 

 

 

 

 

 

impedance, in accordance with EIA/JESD51.

 

 

 

 

ΘJC

Thermal Resistance

7.84

5.56

6.08

°C/W

 

(Junction to Case)

 

 

 

 

 

 

 

Figure 5. AC Test Loads

 

 

 

 

3.0V

577Ω

R1

 

OUTPUT

 

30 pF

577Ω

for tri-state specs

3.0V

R1

OUTPUT

R2

5 pF

 

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

789Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

789Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC Test Conditions

Input Pulse Levels

0V to 3V

Input Rise and Fall Times (10% - 90%)

<3 ns

Input and Output Timing Reference Levels

1.5V

Note

12. These parameters are guaranteed but not tested.

Document #: 001-49918 Rev. *A

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Contents Logic Block Diagram1, 2 FeaturesFunctional Description Cypress Semiconductor Corporation 198 Champion CourtPinouts X16 Top View Not to scaleTsop Pin Definitions Sram Read Device OperationSram Write AutoStore OperationMode Selection Hardware Recall Power UpA15 A07 Mode Power Software StorePreventing AutoStore Mode Selection A15 A07 PowerData Protection Noise ConsiderationsBest Practices Maximum Ratings DC Electrical CharacteristicsOperating Range RangeCapacitance Data Retention and EnduranceThermal Resistance AC Test ConditionsSwitching Waveforms AC Switching CharacteristicsBHE, BLE Data Input Data Output Input Data Valid High ImpedanceData Input Input Data Valid High Impedance Data Output AutoStore/Power Up Recall Parameters Description 20 ns 25 ns 45 ns Unit Min MaxHSB Software Controlled STORE/RECALL Cycle Hardware Store Cycle To Output Active Time when write latch not setDescription 20 ns 25 ns 45 ns Unit Min Max Hardware Store Pulse WidthInputs/Outputs2 Mode Power Truth Table For Sram OperationsHSB should remain High for Sram Operations Ordering Information CY14B104LA-ZS45XC CY14B104LA-ZS45XCTCY14B104LA-ZS45XIT CY14B104LA-ZS45XICY 14 B 104 L a -ZS P 20 X C T Part Numbering NomenclatureZS Tsop NvsramTOP View Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm 51-85160 Document History Sales, Solutions, and Legal InformationGVCH/PYRS USB