Cypress CY14B101NA, CY14B101LA Maximum Ratings, Operating Range, DC Electrical Characteristics

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PRELIMINARY CY14B101LA, CY14B101NA

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested.

Storage Temperature

–65°C to +150°C

Maximum Accumulated Storage Time:

 

At 150°C Ambient Temperature

1000h

At 85°C Ambient Temperature

20 Years

Ambient Temperature with Power Applied.. –55°C to +150°C

Supply Voltage on VCC Relative to GND

–0.5V to 4.1V

Voltage Applied to Outputs in High-Z State–0.5V to VCC + 0.5V

Input Voltage

–0.5V to Vcc+0.5V

Transient Voltage (<20 ns) on

–2.0V to VCC + 2.0V

Any Pin to Ground Potential

Package Power Dissipation

 

Capability (TA = 25°C)

1.0W

Surface Mount Pb Soldering

 

Temperature (3 Seconds)

+260°C

DC Output Current (1 output at a time, 1s duration)......15 mA

Static Discharge Voltage

> 2001V

(per MIL-STD-883, Method 3015)

 

Latch Up Current

...................................................

> 200 mA

Operating Range

 

 

 

 

 

Range

 

Ambient Temperature

VCC

Commercial

 

0°C to +70°C

2.7V to 3.6V

 

 

 

 

Industrial

 

–40°C to +85°C

2.7V to 3.6V

 

 

 

 

DC Electrical Characteristics

Over the Operating Range (VCC = 2.7V to 3.6V)

Parameter

Description

 

 

 

 

 

 

 

 

 

 

Test Conditions

Min

Max

Unit

ICC1

Average VCC Current

 

tRC = 20 ns

 

 

 

 

 

 

 

 

 

 

Commercial

 

65

mA

 

 

 

tRC = 25 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

65

mA

 

 

 

tRC = 45 ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

mA

 

 

 

Values obtained without output loads (IOUT = 0 mA)

Industrial

 

70

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

52

mA

ICC2

Average VCC Current

 

All Inputs Don’t Care, VCC = Max

 

10

mA

 

during STORE

 

Average current for duration tSTORE

 

 

 

ICC3[11]

Average VCC Current at

 

All I/P cycling at CMOS levels.

 

35

mA

 

tRC= 200 ns, 3V, 25°C

 

Values obtained without output loads (IOUT = 0 mA)

 

 

 

 

typical

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICC4

Average VCAP Current

 

All Inputs Don’t Care, VCC = Max

 

5

mA

 

during AutoStore Cycle

Average current for duration tSTORE

 

 

 

ISB

VCC Standby Current

 

 

 

 

> (VCC – 0.2V). All others VIN < 0.2V or > (VCC – 0.2V). Standby

 

5

mA

CE

 

 

 

 

current level after nonvolatile cycle is complete.

 

 

 

 

 

 

Inputs are static. f = 0 MHz

 

 

 

I [12]

Input Leakage Current

 

V

CC

= Max, V

SS

< V

IN

< V

CC

–1

+1

µA

IX

(except HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Leakage Current

 

VCC = Max, VSS < VIN < VCC

–100

+1

µA

 

(for HSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IOZ

Off-State Output

 

VCC = Max, VSS < VOUT < VCC,

 

or

 

> VIH or

 

 

 

 

 

–1

+1

µA

 

CE

OE

BHE/BLE > VIH

 

Leakage Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

or WE < VIL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VIH

Input HIGH Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

VCC+0.5

V

VIL

Input LOW Voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vss–0.5

0.8

V

VOH

Output HIGH Voltage

IOUT = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.4

 

V

VOL

Output LOW Voltage

IOUT = 4 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

V

VCAP[13]

Storage Capacitor

Between VCAP pin and VSS, 5V Rated

61

180

µF

Notes

11.Typical conditions for the active current shown on the DC Electrical characteristics are average values at 25°C (room temperature), and VCC = 3V. Not 100% tested.

12.The HSB pin has IOUT = -2 uA for VOH of 2.4V when both active high and low drivers are disabled. When they are enabled standard VOH and VOL are valid. This parameter is characterized but not tested.

13.VCAP (Storage capacitor) nominal value is 68 uF.

Document #: 001-42879 Rev. *B

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Contents Cypress Semiconductor Corporation FeaturesLogic Block Diagram1, 2 Functional DescriptionTop View PinoutsNot to scale Power Supply Inputs to the Device .0V +20%, -10% Output Enable, Active LOW. The active LOWByte High Enable, Active LOW. Controls DQ15 DQ8 Byte Low Enable, Active LOW. Controls DQ7 DQ0AutoStore Operation Device OperationSram Read Sram WriteSoftware Store Hardware Recall Power UpMode Selection A15 A09 Mode PowerNoise Considerations Mode Selection A15 A09Preventing AutoStore Data ProtectionRange DC Electrical CharacteristicsMaximum Ratings Operating RangeAC Test Conditions Data Retention and EnduranceCapacitance Thermal ResistanceSram Write Cycle AC Switching CharacteristicsSwitching Waveforms Parameters Sram Read CycleSram Read Cycle #2 CE and OE Controlled 3, 15 Sram Write Cycle #2 CE Controlled 3, 18, 19 Parameters Description 20 ns 25 ns 45 ns Unit Min Max AutoStore/Power Up RecallDescription 20 ns 25 ns 45 ns Unit Min Max Software Controlled STORE/RECALL CycleHardware Store Pulse Width To Output Active Time when write latch not setHardware Store Cycle Description 20ns 25ns 45ns Unit Min MaxTruth Table For Sram Operations Truth Table for x8 Configuration Inputs/Outputs Mode PowerTruth Table for x16 Configuration Inputs/Outputs Mode PowerOrdering Information CY14B101LA-BA25XC CY14B101LA-ZS25XCTCY14B101LA-ZS25XC CY14B101LA-BA25XCTCY14B101LA-BA45XC CY14B101LA-ZS45XCTCY14B101LA-ZS45XC CY14B101LA-BA45XCTNvsram Part Numbering NomenclatureCY 14 B 101L A-ZS 20 X C T ZS TsopPin Tsop II Package DiagramsBall Fbga 6 mm x 10 mm x 1.2 mm Pin Ssop Pin Soic GVCH/PYRS Document HistoryUNC/PYRS GVCH/AESAUSB Sales, Solutions, and Legal Information