Philips Magnetoresistive Sensor manual Using magnetoresistive sensors, KMZ10B

Page 10

Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

General

Using magnetoresistive sensors

The excellent properties of the KMZ magnetoresistive sensors, including their high sensitivity, low and stable offset, wide operating temperature and frequency ranges and ruggedness, make them highly suitable for use in a wide range of automotive, industrial and other applications. These are looked at in more detail in other chapters in this book; some general practical points about using MR sensors are briefly described below.

ANALOG APPLICATION CIRCUITRY

In many magnetoresistive sensor applications where analog signals are measured (in measuring angular position, linear position or current measurement, for example), a good application circuit should allow for sensor offset and sensitivity adjustment. Also, as the sensitivity of many magnetic field sensors has a drift with temperature, this also needs compensation. A basic circuit is shown in Fig.11.

In the first stage, the sensor signal is pre-amplified and offset is adjusted. After temperature effects are compensated, final amplification and sensitivity adjustment takes place in the last stage. This basic circuit can be extended with additional components to meet specific EMC requirements or can be modified to obtain customized output characteristics (e.g. a different output voltage range or a current output signal).

Philips magnetoresistive sensors have a linear sensitivity drift with temperature and so a temperature sensor with

linear characteristics is required for compensation. Philips KTY series are well suited for this purpose, as their positive Temperature Coefficient (TC) matches well with the negative TC of the MR sensor. The degree of compensation can be controlled with the two resistors R7 and R8 and special op-amps, with very low offset and temperature drift, should be used to ensure compensation is constant over large temperature ranges.

Please refer to part 2 of this book for more information on the KTY temperature sensors; see also the Section “Further information for advanced users” later in this chapter for a more detailed description of temperature compensation using these sensors.

USING MAGNETORESISTIVE SENSORS WITH A COMPENSATION

COIL

For general magnetic field or current measurements it is useful to apply the ‘null-field’ method, in which a magnetic field (generated by a current carrying coil), equal in magnitude but opposite in direction, is applied to the sensor. Using this ‘feedback’ method, the current through the coil is a direct measure of the unknown magnetic field amplitude and it has the advantage that the sensor is being operated at its zero point, where inaccuracies as result of tolerances, temperature drift and slight non-linearities in the sensor characteristics are insignificant. A detailed discussion of this method is covered in Chapter “Weak field measurement”.

handbook, full pagewidth

offset

 

 

 

adjustment

 

 

 

 

R1

 

R2

 

 

500 kΩ

 

 

100 kΩ

 

 

 

 

KMZ10B

 

 

R3

3

 

 

22 kΩ

 

 

 

 

2

 

 

 

 

4

 

 

 

1

 

 

 

R4

 

 

 

 

 

 

 

 

 

 

14 kΩ

 

 

 

 

 

 

 

 

R5

R7

 

R9

 

 

 

 

 

 

 

 

2.4 kΩ

 

33 kΩ

 

 

 

 

 

 

140 kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

R6

 

 

 

 

 

2

 

 

 

KTY82-210

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

op-amp 1

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

TLC2272

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R10

 

 

 

 

 

 

 

 

 

 

 

R8

 

 

 

 

 

 

 

 

 

 

 

 

 

2.4 kΩ

 

 

33 kΩ

 

 

 

 

 

 

 

 

 

sensitivity

VS = 5 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

adjustment

 

 

 

 

 

 

 

R12

 

 

 

 

 

 

 

150 kΩ

 

 

 

R11

 

 

 

 

IC1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

22 kΩ

6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

op-amp

 

 

 

 

VO = 0.2 V to 4.8 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

(with resistive load

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

greater than 10 kΩ)

 

 

 

 

 

 

 

 

 

 

 

 

 

C1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10 nF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MBH687

Fig.11 Basic application circuit with temperature compensation and offset adjustment.

2000 Sep 06

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Contents General Contents Magnetoresistive sensors for Magnetic field measurementPhilips Semiconductors Operating principlesKMZ10 chip structure 2000 Sep Linearize Application Package Range Sensor FieldSensitivity TypeSensor characteristics Flipping Effect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m Using magnetoresistive sensors KMZ10BFurther information for advanced users + Δ R ⎛ H For R 8 = R 2R TA1 = 1 + Positive temperature coefficient TCGiven by Magnetoresistive sensorResistance- field relation Appendix 1 the Magnetoresistive EffectSinφcosφ Magnetization of the thin layer LinearizationSensitivity Materials Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/mThis also considerably enlarges Hk. If a small temperature Appendix 2 Sensor FlippingSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Weak Field Measurement ContentsFundamental measurement techniques Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect