Philips Magnetoresistive Sensor manual Sensitivity

Page 17

Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

General

BARBER-POLE SENSORS

A number of Philips’ magnetoresistive sensors use a ‘barber-pole’ construction to linearize the R-H relationship, incorporating slanted strips of a good conductor to rotate the current. This type of sensor has the widest range of linearity, smaller resistance and the least associated distortion than any other form of linearization, and is well suited to medium and high fields.

equal widths. The characteristic is plotted in Fig 20 and it can be seen that for small values of Hy relative to H0, the R-H dependence is linear. In fact this equation gives the same linear R-H dependence as the planar Hall-effect sensor, but it has the magnitude of the magnetoresistive sensor.

handbook, halfpage

Permalloy

Barber pole

 

y + Ι

 

Ι

 

 

 

 

Ι

 

 

handbook,R halfpage

ΔR

MBH615

ϑ

Magnetization

R0

x

MBH614

Fig.19 Linearization of the magnetoresistive effect with barber-poles (current and magnetization shown in quiescent state).

The current takes the shortest route in the high-resistivity gaps which, as shown in Fig 19, is perpendicular to the barber-poles. Barber-poles inclined in the opposite direction will result in the opposite sign for the R-H characteristic, making it extremely simple to realize a Wheatstone bridge set-up.

The signal voltage of a Barber-pole sensor may be calculated from the basic equation (1) with Θ = φ + 45˚ (θ = + 45˚):

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

0.5

0

0.5

1

 

 

HY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H0

 

Fig.20 Calculated R-H characteristic of a barber-pole sensor.

Barber-pole sensors require a certain magnetization state. A bias field of several hundred A/m can be generated by the sensing current alone, but this is not sufficient for sensor stabilization, so can be neglected. In most applications, an external field is applied for this purpose.

Sensitivity

Due to the high demagnetization, in most applications field components in the z-direction (perpendicular to the layer plane) can be ignored. Nearly all sensors are most sensitive to fields in the y-direction, with Hx only having a limited or even negligible influence.

UBP = ρl

L

1

Δρ

Δρ Hy

1

Hy

2

-----

α⎜1

+ --

------

±------ ------

------

 

 

wt

2

ρ

ρ H0

 

 

 

 

 

 

 

 

H

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

(9)

Definition of the sensitivity S contains the signal and field variations (DU and DH), as well as the operating voltage U0 (as DU is proportional to U0):

So =

ΔU1

=

ΔU

(10)

------- ------

 

---------------U0ΔH

where a is a constant arising from the partial shorting of the

ΔHU0

 

 

resistor, amounting to 0.25 if barber-poles and gaps have

2000 Sep 06

17

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Contents General Magnetoresistive sensors for Magnetic field measurement ContentsOperating principles Philips SemiconductorsKMZ10 chip structure 2000 Sep Sensitivity Sensor FieldLinearize Application Package Range TypeFlipping Sensor characteristicsEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m KMZ10B Using magnetoresistive sensorsFurther information for advanced users + Δ R ⎛ H 2R T For R 8 = R Given by Positive temperature coefficient TC A1 = 1 + Magnetoresistive sensorSinφcosφ Appendix 1 the Magnetoresistive EffectResistance- field relation Linearization Magnetization of the thin layerSensitivity Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m MaterialsAppendix 2 Sensor Flipping This also considerably enlarges Hk. If a small temperatureSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect