Philips Magnetoresistive Sensor Magnetoresistive sensors for Magnetic ﬁeld measurement, Contents

Page 2

Philips Semiconductors

Magnetoresistive sensors for

magnetic ﬁeld measurement

CONTENTS

General ﬁeld measurement

∙Operating principles

∙Philips magnetoresistive sensors

∙Flipping

∙Effect of temperature on behaviour

∙Using magnetoresistive sensors

∙Further information for advanced users

∙Appendix 1: The magnetoresistive effect

∙Appendix 2: Sensor flipping

∙Appendix 3: Sensor layout.

General

Fig.1 Philips magnetoresistive sensors.

2000 Sep 06

2

Image 2

Contents General Contents Magnetoresistive sensors for Magnetic ﬁeld measurementPhilips Semiconductors Operating principlesKMZ10 chip structure 2000 Sep Linearize Application Package Range Sensor FieldSensitivity TypeSensor characteristics FlippingEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m Using magnetoresistive sensors KMZ10BFurther information for advanced users + Δ R ⎛ H For R 8 = R 2R TA1 = 1 + Positive temperature coefficient TCGiven by Magnetoresistive sensorSinφcosφ Appendix 1 the Magnetoresistive EffectResistance- ﬁeld relation Magnetization of the thin layer LinearizationSensitivity Materials Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/mThis also considerably enlarges Hk. If a small temperature Appendix 2 Sensor FlippingSensor output ‘Vo’ as a function of the transverse ﬁeld Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect