Philips Magnetoresistive Sensor manual Further information for advanced users

Page 11
which clearly shows the non-linear nature of the MR effect.
More detailed information on the derivation of the formulae for the MR effect can be found in Appendix 1.
LINEARIZATION
The magnetoresistive effect can be linearized by depositing aluminium stripes (Barber poles), on top of the permalloy strip at an angle of 45° to the strip axis (see Fig.12). As aluminium has a much higher conductivity than permalloy, the effect of the Barber poles is to rotate the current direction through 45° (the current flow assumes a ‘saw-tooth’ shape), effectively changing the rotation angle
of the magnetization relative to the current from α to α − 45°.
2000 Sep 06

Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

Further information for advanced users

THE MR EFFECT

General

In sensors employing the MR effect, the resistance of the

 

sensor under the influence of a magnetic field changes as

 

it is moved through an angle α as given by:

handbook, halfpage

Barber pole

R = RO + ΔRO cos2 α

 

(2)

 

It can be shown that

I

I

sin

2

α =

H2

(3)

 

 

------- for H HO

MLC125

 

 

 

HO2

 

 

and

 

 

 

Permalloy

 

 

 

Magnetization

sin2 α = 1 for H > HO

(4)

 

where Ho can be regarded as a material constant

 

comprising the so called demagnetizing and anisotropic

 

fields.

Fig.12 Linearization of the magnetoresistive effect.

 

Applying equations (3) and (4) to equation (2) leads to:

R

= RO

H2

(5)

A Wheatstone bridge configuration is also used for

+ ΔRO 1

-------for H H0

 

 

H2

 

linearized applications. In one pair of diagonally opposed

 

 

 

O

 

R = RO for H > HO

(6)

elements, the Barber poles are at +45° to the strip axis,

while in another pair they are at 45°. A resistance

increase in one pair of elements due to an external magnetic field is thus ‘matched’ by a decrease in resistance of equal magnitude in the other pair.

The resulting bridge imbalance is then a linear function of the amplitude of the external magnetic field in the plane of the permalloy strips, normal to the strip axis.

11

Image 11
Contents General Magnetoresistive sensors for Magnetic field measurement ContentsOperating principles Philips SemiconductorsKMZ10 chip structure 2000 Sep Type Sensor FieldSensitivity Linearize Application Package RangeFlipping Sensor characteristicsEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m KMZ10B Using magnetoresistive sensorsFurther information for advanced users + Δ R ⎛ H 2R T For R 8 = RMagnetoresistive sensor Positive temperature coefficient TCGiven by A1 = 1 +Sinφcosφ Appendix 1 the Magnetoresistive EffectResistance- field relation Linearization Magnetization of the thin layerSensitivity Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m MaterialsAppendix 2 Sensor Flipping This also considerably enlarges Hk. If a small temperatureSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect