Philips Magnetoresistive Sensor manual Technique Effect

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Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

General

The influence of other disturbing fields can also be eliminated provided they are well known, by adding a second current source to the compensating coil. Such fields might be those arising from the set-up housing, ferromagnetic components placed close to the sensor or magnetic fields from electrical motors.

The brief summary in Table 3 compares the types of compensation and their effects, so they can be assessed for their suitability in a given application. Because these options encompass a range of costs, the individual requirements of an application should be carefully analysed in terms of the performance gains versus relative costs.

 

 

CLOCK

FLIPPING

LF

PRE-AMPLIFIER

WITH

SOURCE

 

SUPRESSION

 

LC

OF OFFSET

PHASE-

SENSITIVE

DEMODULATOR

CURRENT

REGULATOR

VOLTAGE & CURRENT

OUTPUT

MBH619

Fig.34 Block diagram of compensation circuit.

Table 4 Summery of compensation techniques

TECHNIQUE

EFFECT

 

 

Setting

avoids reduction in sensitivity due to constant stabilization field

 

 

Flipping

avoids reduction in sensitivity due to constant stabilization field, as well as

 

compensating for sensor offset and offset drift due to temperature

 

 

Current supply

reduction of sensitivity drift with temperature by a factor of two

 

 

Electro-magnetic feedback

accurate compensation of sensitivity drift with temperature

 

 

2000 Sep 06

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Contents General Magnetoresistive sensors for Magnetic field measurement ContentsOperating principles Philips SemiconductorsKMZ10 chip structure 2000 Sep Sensitivity Sensor FieldLinearize Application Package Range TypeFlipping Sensor characteristicsEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m KMZ10B Using magnetoresistive sensorsFurther information for advanced users + Δ R ⎛ H 2R T For R 8 = RGiven by Positive temperature coefficient TCA1 = 1 + Magnetoresistive sensorSinφcosφ Appendix 1 the Magnetoresistive EffectResistance- field relation Linearization Magnetization of the thin layerSensitivity Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m MaterialsAppendix 2 Sensor Flipping This also considerably enlarges Hk. If a small temperatureSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect