Philips Magnetoresistive Sensor manual 25 oC

Page 8

Philips Semiconductors

Magnetoresistive sensors for

magnetic ﬁeld measurement

General

15							MLC134
15
VO				T	=	25oC
(mV/V)				amb
(mV/V)
10							25oC
10
							75oC
5
							125oC
0
5
10
			operating range
15		1
3	2	1	0	1		2	3
						H y (kA/m)

Fig.9 Output voltage ‘Vo’ as a fraction of the supply voltage of a KMZ10B sensor as a function of transverse field ‘Hy’ for several temperatures.

2000 Sep 06

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Contents General Contents Magnetoresistive sensors for Magnetic ﬁeld measurementPhilips Semiconductors Operating principlesKMZ10 chip structure 2000 Sep Sensor Field SensitivityLinearize Application Package Range TypeSensor characteristics FlippingEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m Using magnetoresistive sensors KMZ10BFurther information for advanced users + Δ R ⎛ H For R 8 = R 2R TPositive temperature coefficient TC Given byA1 = 1 + Magnetoresistive sensorSinφcosφ Appendix 1 the Magnetoresistive EffectResistance- ﬁeld relation Magnetization of the thin layer LinearizationSensitivity Materials Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/mThis also considerably enlarges Hk. If a small temperature Appendix 2 Sensor FlippingSensor output ‘Vo’ as a function of the transverse ﬁeld Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect