Philips Magnetoresistive Sensor manual Given by, A1 = 1 +, Magnetoresistive sensor, Calculated by

Page 14

Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

General

 

 

 

 

 

VS

 

 

OP1

R10

 

 

 

 

 

 

 

 

 

 

RT

R12

 

 

 

 

KTY82-110

R14

 

 

 

 

 

 

 

R1

 

R5

 

 

 

RA

 

OP3

VO

 

 

 

 

 

R4

R6

 

 

 

 

 

 

 

 

offset

 

 

R13

 

 

 

 

 

 

 

R3

R B

R7

 

 

 

 

OP2

R9

 

 

 

 

 

R11

 

 

 

 

 

 

KMZ10B

R2

 

 

 

 

 

 

 

 

 

MLC145

Fig.16 KMZ10B application circuit with instrumentation amplifier.

The amplification of the input stage (‘OP1’ and ‘OP2’) is

 

 

 

RT

× TCKTY

 

 

 

 

(11)

given by:

 

TCA = ----------------------------------

 

 

 

 

 

 

 

 

RA + RB + RT

 

 

 

 

 

RT + RB

(9)

For the given negative ‘TC’ of the magnetoresistive sensor

A1 = 1 + --------------------

RA

 

and the required amplification of the input stage ‘A1’, the

where RT is the temperature dependent resistance of the

resistance ‘RA’ and ‘RB’ can be calculated by:

 

 

 

 

 

 

TCKTY

 

 

1

 

 

KTY82 sensor and RB is the bridge resistance of the

 

R

 

= R

 

×

1

(12)

 

 

 

----------------- ×

 

-------

1

magnetoresistive sensor.

 

 

B

 

T

 

TCA

 

A1

 

The amplification of the complete amplifier can be

 

RA

RT

+ RB

 

 

 

 

(13)

calculated by:

 

= --------------------

 

 

 

 

R14

 

 

 

A1 1

 

 

 

 

 

(10)

 

 

 

 

 

 

 

 

 

 

 

A = A1 × ---------

where TCKTY is the temperature coefficient of the KTY

R10

 

 

sensor and TCA is the temperature coefficient of the

 

 

 

 

The positive temperature coefficient (TC) of the

 

amplifier. This circuit also provides for adjustment of gain

amplification is:

 

and offset voltage of the magnetic-field sensor.

 

2000 Sep 06

14

Image 14
Contents General Contents Magnetoresistive sensors for Magnetic field measurementPhilips Semiconductors Operating principlesKMZ10 chip structure 2000 Sep Linearize Application Package Range Sensor FieldSensitivity TypeSensor characteristics FlippingEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m Using magnetoresistive sensors KMZ10B Further information for advanced users + Δ R ⎛ H For R 8 = R 2R TA1 = 1 + Positive temperature coefficient TCGiven by Magnetoresistive sensorSinφcosφ Appendix 1 the Magnetoresistive EffectResistance- field relation Magnetization of the thin layer LinearizationSensitivity Materials Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/mThis also considerably enlarges Hk. If a small temperature Appendix 2 Sensor FlippingSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect