Philips Magnetoresistive Sensor Sensor Field, Sensitivity, Linearize Application Package Range

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Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

General

Two further resistors, RT, are included, as shown in Fig.5. These are for trimming sensor offset down to (almost) zero during the production process.

MLC129

handbook, halfpage

RT

 

RT

 

4

3

2

1

VCC

VO

GND

VO

Fig.5 Bridge configuration with offset trimmed to zero, by resistors RT.

For some applications however, the MR effect can be used to its best advantage when the sensor output characteristic has been linearized. These applications include:

Weak field measurements, such as compass applications and traffic detection;

Current measurement; and

Rotational speed measurement.

For an explanation of how the characteristic is linearized, please refer to the Section “Further information for advanced users” later in this chapter.

Philips magnetoresistive sensors

Based on the principles described, Philips has a family of basic magnetoresistive sensors. The main characteristics of the KMZ sensors are given in Table 2.

Table 2 Main characteristics of Philips sensors

SENSOR

 

FIELD

VCC

SENSITIVITY

Rbridge

LINEARIZE

APPLICATION

PACKAGE

RANGE

(mV V)

MR

TYPE

 

(kA/m)(1)

(V)

---------------------

(kΩ)

EFFECT

EXAMPLES

 

 

 

(kA m)

 

 

KMZ10A

SOT195

0.5 to +0.5

9

16.0

1.2

Yes

compass, navigation, metal

KMZ10A1(2)

SOT195

0.05 to +0.05

9

22.0

1.3

Yes

detection, traffic control

KMZ10B

SOT195

2.0 to +2.0

12

4.0

2.1

Yes

current measurement,

KMZ10C

SOT195

7.5 to +7.5

10

1.5

1.4

Yes

angular and linear position,

 

 

 

 

 

 

 

reference mark detection,

 

 

 

 

 

 

 

wheel speed

 

 

 

 

 

 

 

 

KMZ51

SO8

0.2 to +0.2

8

16.0

2.0

Yes

compass, navigation, metal

 

 

 

 

 

 

 

detection, traffic control

KMZ52

SO16

0.2 to +0.2

8

16.0

2.0

Yes

 

 

 

 

 

 

 

 

Notes

1.In air, 1 kA/m corresponds to 1.25 mT.

2.Data given for operation with switched auxiliary field.

2000 Sep 06

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Contents General Magnetoresistive sensors for Magnetic field measurement ContentsOperating principles Philips SemiconductorsKMZ10 chip structure 2000 Sep Sensitivity Sensor FieldLinearize Application Package Range TypeFlipping Sensor characteristicsEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m KMZ10B Using magnetoresistive sensorsFurther information for advanced users + Δ R ⎛ H 2R T For R 8 = RGiven by Positive temperature coefficient TCA1 = 1 + Magnetoresistive sensorSinφcosφ Appendix 1 the Magnetoresistive EffectResistance- field relation Linearization Magnetization of the thin layerSensitivity Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m MaterialsAppendix 2 Sensor Flipping This also considerably enlarges Hk. If a small temperatureSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Fundamental measurement techniques ContentsWeak Field Measurement Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect