Philips Magnetoresistive Sensor manual Effect of temperature on behaviour

Page 7

Philips Semiconductors

Magnetoresistive sensors for

magnetic field measurement

General

Figure 7 also shows that the flipping itself is not instantaneous, because not all the permalloy strips flip at the same rate. In addition, it illustrates the hysteresis effect exhibited by the sensor. For more information on sensor flipping, see Appendix 2 of this chapter.

Effect of temperature on behaviour

Figure 8 shows that the bridge resistance increases linearly with temperature, due to the bridge resistors’ temperature dependency (i.e. the permalloy) for a typical KMZ10B sensor. The data sheets show also the spread in this variation due to manufacturing tolerances and this should be taken into account when incorporating the sensors into practical circuits.

In addition to the bridge resistance, the sensitivity also varies with temperature. This can be seen from Fig.9, which plots output voltage against transverse field ‘Hy’ for various temperatures. Figure 9 shows that sensitivity falls with increasing temperature (actual values for given for every sensor in the datasheets). The reason for this is rather complex and is related to the energy-band structure of the permalloy strips.

MBB897

3

handbook, halfpage

Rbridge (kΩ)

2

1

 

 

 

 

 

 

 

 

40

0

40

80

120

160

 

 

 

 

 

 

 

 

 

 

T

(oC)

 

 

 

 

 

 

 

amb

 

 

Fig.8 Bridge resistance of a KMZ10B sensor as

a function of ambient temperature.

2000 Sep 06

7

Image 7
Contents General Magnetoresistive sensors for Magnetic field measurement ContentsOperating principles Philips SemiconductorsKMZ10 chip structure 2000 Sep Type Sensor FieldSensitivity Linearize Application Package RangeFlipping Sensor characteristicsEffect of temperature on behaviour 25 oC Amb MV/V 75 oC 125 oC Operating range KA/m KMZ10B Using magnetoresistive sensorsFurther information for advanced users + Δ R ⎛ H 2R T For R 8 = RMagnetoresistive sensor Positive temperature coefficient TCGiven by A1 = 1 +Resistance- field relation Appendix 1 the Magnetoresistive EffectSinφcosφ Linearization Magnetization of the thin layerSensitivity Materials 10−8Ωm Δρ/ρ% ΙΙkΔ/m MaterialsAppendix 2 Sensor Flipping This also considerably enlarges Hk. If a small temperatureSensor output ‘Vo’ as a function of the transverse field Hy Appendix 3 Sensor Layout KMZ10 and KMZ11 bridge configuration 2000 Sep Weak Field Measurement ContentsFundamental measurement techniques Flipping coil T flipping current if Time Internal magnetization Sensor Temperature Drift 25 oC Flipping coil Sensor KMZ10A1 Technique Effect